MT29F768G08EECBBJ4-37:B TR

Product Overview

Category

MT29F768G08EECBBJ4-37:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F768G08EECBBJ4-37:B TR offers a large storage capacity of 768 gigabits (96 gigabytes).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a compact package that allows for easy integration into various electronic devices.

Packaging/Quantity

The MT29F768G08EECBBJ4-37:B TR is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Product Name: MT29F768G08EECBBJ4-37:B TR
• Category: NAND Flash Memory
• Storage Capacity: 768 gigabits (96 gigabytes)
• Data Transfer Rate: High-speed
• Power Consumption: Low
• Package Type: Surface-mount device (SMD)

Detailed Pin Configuration

The detailed pin configuration of the MT29F768G08EECBBJ4-37:B TR may vary depending on the specific manufacturer's design. However, it generally includes the following pins:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. WE: Write enable
5. RE: Read enable
6. A0-A19: Address inputs
7. DQ0-DQ7: Data inputs/outputs
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• High-speed data access: The MT29F768G08EECBBJ4-37:B TR offers fast read and write operations, allowing for quick data access.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: This NAND flash memory utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the product's lifespan.
• Block management: The product includes block management features that optimize data storage and improve overall performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package

Disadvantages

• Limited endurance: NAND flash memory has a limited number of program/erase cycles before it may start to degrade.
• Higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F768G08EECBBJ4-37:B TR is based on NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge within the cell. When reading data, the charge level is measured to determine the stored value. Writing data involves applying specific voltage levels to modify the charge within the cells.

Detailed Application Field Plans

The MT29F768G08EECBBJ4-37:B TR is widely used in various electronic devices that require high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage for apps, media files, and user data.
2. Digital cameras: It allows for storing a large number of high-resolution photos and videos.
3. Solid-state drives (SSDs): The product is commonly used as the primary storage medium in SSDs, offering fast boot times and improved system performance.

Detailed and Complete Alternative Models

• MT29F768G08EECBBJ4-37:B TR is one of the alternative models available in the market. Other similar NAND flash memory products include:
  • MT29F768G08EECBBJ4-36:B TR
  • MT29F768G08EECBBJ4-38:B TR
  • MT29F768G08EECBBJ4-39:B TR

These alternative models may have slight variations in specifications or features but serve the same purpose of high-capacity data storage.

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