Micron Technology Inc.
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MT29F768G08EEHBBJ4-3R:B

MT29F768G08EEHBBJ4-3R:B

Product Overview

Category

MT29F768G08EEHBBJ4-3R:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F768G08EEHBBJ4-3R:B offers a storage capacity of 768 gigabits (96 gigabytes), allowing for ample space to store large amounts of data.
  • Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
  • Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
  • Low power consumption: The MT29F768G08EEHBBJ4-3R:B is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
  • Compact package: This NAND flash memory is packaged in a small form factor, making it suitable for integration into compact electronic devices.

Packaging/Quantity

The MT29F768G08EEHBBJ4-3R:B is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

  • Manufacturer: Micron Technology Inc.
  • Model: MT29F768G08EEHBBJ4-3R:B
  • Memory Type: NAND Flash
  • Storage Capacity: 768 gigabits (96 gigabytes)
  • Interface: Toggle Mode 2.0
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 63-ball VFBGA

Detailed Pin Configuration

The MT29F768G08EEHBBJ4-3R:B has a total of 63 pins. The pin configuration is as follows:

  1. VCCQ
  2. GNDQ
  3. RE#
  4. WE#
  5. CLE
  6. ALE
  7. CE#
  8. R/B#
  9. WP#
  10. NC
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Functional Features

  • High-speed data transfer: The MT29F768G08EEHBBJ4-3R:B supports Toggle Mode 2.0 interface, enabling fast read and write operations.
  • Error correction: This NAND flash memory incorporates advanced error correction techniques to ensure data integrity and reliability.
  • Wear leveling: The product utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the flash memory.
  • Bad block management: The MT29F768G08EEHBBJ4-3R:B employs efficient bad block management techniques to identify and isolate defective blocks, ensuring optimal performance.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Reliable performance
  • Low power consumption
  • Compact form factor

Disadvantages

  • Relatively high cost compared to other types of memory
  • Limited endurance due to the finite number of program/erase cycles

Working Principles

The MT29F768G08EEHBBJ4-3R:B utilizes NAND flash memory technology. It consists of a grid of memory cells that store data in a non-volatile manner. These cells are organized into pages, blocks, and planes. Data is written by applying electrical charges to specific memory cells, and it can be read by detecting the presence or absence of these charges. The Toggle Mode 2.0 interface facilitates fast data transfer between the NAND flash memory and the host device.

Detailed Application Field Plans

The MT

技術ソリューションにおける MT29F768G08EEHBBJ4-3R:B の適用に関連する 10 件の一般的な質問と回答をリストします。

1. What is the MT29F768G08EEHBBJ4-3R:B?

The MT29F768G08EEHBBJ4-3R:B is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the storage capacity of the MT29F768G08EEHBBJ4-3R:B?

The MT29F768G08EEHBBJ4-3R:B has a storage capacity of 768 gigabits (or 96 gigabytes).

3. What is the interface used by the MT29F768G08EEHBBJ4-3R:B?

The MT29F768G08EEHBBJ4-3R:B uses a standard NAND flash interface, such as ONFI (Open NAND Flash Interface) or Toggle Mode.

4. What are some common applications of the MT29F768G08EEHBBJ4-3R:B?

The MT29F768G08EEHBBJ4-3R:B is commonly used in various technical solutions, including solid-state drives (SSDs), embedded systems, industrial automation, automotive electronics, and consumer electronics.

5. What is the operating voltage range of the MT29F768G08EEHBBJ4-3R:B?

The MT29F768G08EEHBBJ4-3R:B operates at a voltage range of 2.7V to 3.6V.

6. What is the maximum data transfer rate of the MT29F768G08EEHBBJ4-3R:B?

The MT29F768G08EEHBBJ4-3R:B supports high-speed data transfer rates, typically up to 400 megabytes per second (MB/s).

7. Does the MT29F768G08EEHBBJ4-3R:B support error correction codes (ECC)?

Yes, the MT29F768G08EEHBBJ4-3R:B supports various ECC algorithms to ensure data integrity and reliability.

8. Can the MT29F768G08EEHBBJ4-3R:B withstand harsh environmental conditions?

Yes, the MT29F768G08EEHBBJ4-3R:B is designed to operate reliably in a wide range of temperatures (-40°C to 85°C) and can withstand shock and vibration.

9. Is the MT29F768G08EEHBBJ4-3R:B compatible with different operating systems?

Yes, the MT29F768G08EEHBBJ4-3R:B is compatible with various operating systems, including Windows, Linux, and embedded real-time operating systems.

10. What is the lifespan of the MT29F768G08EEHBBJ4-3R:B?

The lifespan of the MT29F768G08EEHBBJ4-3R:B depends on various factors such as usage patterns and operating conditions. However, it is designed to have a long lifespan and high endurance for reliable operation over an extended period of time.