MT29F768G08EEHBBJ4-3R:B TR

Product Overview

Category

MT29F768G08EEHBBJ4-3R:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F768G08EEHBBJ4-3R:B TR offers a large storage capacity of 768 gigabytes (GB), allowing users to store a significant amount of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F768G08EEHBBJ4-3R:B TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F768G08EEHBBJ4-3R:B TR is typically packaged in surface mount technology (SMT) packages, which ensure easy installation on printed circuit boards (PCBs). The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 768 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F768G08EEHBBJ4-3R:B TR has a pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data, improving efficiency and flexibility.
• Random Access: Provides random access to any location within the memory, facilitating quick data retrieval.
• Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear Leveling: Implements wear-leveling techniques to distribute write operations evenly across the memory, extending its lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.
• Susceptible to data loss in case of power failure during write operations.

Working Principles

The MT29F768G08EEHBBJ4-3R:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When data is written, the charge on the floating gate is adjusted, and when data is read, the charge is measured to determine the stored value.

Detailed Application Field Plans

The MT29F768G08EEHBBJ4-3R:B TR finds applications in various fields, including: 1. Smartphones and tablets: Provides ample storage for apps, multimedia content, and user data. 2. Digital cameras: Enables high-capacity storage for photos and videos. 3. Solid-state drives (SSDs): Serves as primary storage in SSDs, offering fast and reliable data access.

Detailed and Complete Alternative Models

Some alternative models to the MT29F768G08EEHBBJ4-3R:B TR include: - Samsung K9K8G08U0D - Toshiba TH58NVG7D2FLA89 - Micron MT29F512G08CJAAA

These models offer similar features and specifications, providing users with alternative options based on their specific requirements.

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