MT29F8G16ADBDAH4-AIT:D TR

Product Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, fast read/write speeds, reliable performance
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for long-term data retention
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Model: MT29F8G16ADBDAH4-AIT:D TR
• Capacity: 8 Gigabytes (GB)
• Interface: Parallel NAND Flash
• Voltage: 3.3V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 Megabytes per second (MB/s)
• Endurance: 100,000 program/erase cycles
• Retention: Up to 10 years

Detailed Pin Configuration

The MT29F8G16ADBDAH4-AIT:D TR flash memory module has the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. VSS
36. NC
37. NC
38. NC
39. NC
40. VCC

Functional Features

• High-speed data transfer for efficient read/write operations
• Error correction and detection mechanisms for data integrity
• Wear-leveling algorithms to distribute write operations evenly across memory cells
• Power-saving features for extended battery life in portable devices
• Block management techniques to optimize performance and lifespan

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer rates - Reliable and durable - Low power consumption - Suitable for various electronic devices

Disadvantages: - Higher cost compared to other types of memory - Limited endurance compared to some alternative models

Working Principles

The MT29F8G16ADBDAH4-AIT:D TR flash memory operates based on the principles of NAND flash technology. It uses a grid of memory cells, where each cell stores multiple bits of data. The data is stored by trapping electric charges within the floating gate of each cell. To read or write data, voltage levels are applied to specific pins, enabling the movement of charges and altering the state of the memory cells.

Detailed Application Field Plans

The MT29F8G16ADBDAH4-AIT:D TR flash memory module finds applications in various electronic devices, including but not limited to:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Digital cameras
4. Mobile phones
5. Tablets
6. Automotive infotainment systems
7. Industrial control systems
8. Embedded systems

Detailed and Complete Alternative Models

1. MT29F8G08ABABA
2. MT29F8G08ABACAWP
3. MT29F8G08ABACAWP-IT
4. MT29F8G08ABACAWP:D
5. MT29F8G08ABACAWP:D TR

These alternative models offer similar specifications and functionality to the MT29F8G16ADBDAH4-AIT:D TR flash memory module, but with varying capacities and package options.

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