MT41K2G4RKB-107:N

Product Overview

Category

MT41K2G4RKB-107:N belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and high-performance computing applications that require fast and reliable memory access.

Characteristics

• High-speed operation: The MT41K2G4RKB-107:N offers fast data transfer rates, allowing for efficient processing of large amounts of data.
• Large capacity: With a capacity of 2 gigabits (256 megabytes), this module provides ample storage space for demanding applications.
• Low power consumption: The MT41K2G4RKB-107:N is designed to operate efficiently while consuming minimal power.
• Error correction: It incorporates error-correcting code (ECC) technology, which helps detect and correct memory errors, ensuring data integrity.

Package and Quantity

The MT41K2G4RKB-107:N is packaged in a small outline dual in-line memory module (SODIMM) form factor. Each package contains one memory module.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 2 Gb (256 MB)
• Speed: 1066 MHz
• Voltage: 1.5V
• Pin Count: 204
• CAS Latency: CL7
• Operating Temperature Range: 0°C to 85°C

Detailed Pin Configuration

The MT41K2G4RKB-107:N has a total of 204 pins arranged in a specific configuration. Please refer to the manufacturer's datasheet for the detailed pin diagram.

Functional Features

• High-speed data transfer: The MT41K2G4RKB-107:N supports high-speed data transfer rates, enabling quick access to stored information.
• Error correction: ECC technology ensures data integrity by detecting and correcting memory errors.
• Low power consumption: The module is designed to operate efficiently while consuming minimal power, contributing to energy savings.
• Compatibility: It is compatible with various computer systems and servers, providing flexibility in its usage.

Advantages and Disadvantages

Advantages

• Fast data transfer rates enhance system performance.
• Error-correcting code technology improves data reliability.
• Low power consumption contributes to energy efficiency.
• Wide compatibility with different systems allows for versatile usage.

Disadvantages

• Limited capacity compared to higher-end memory modules.
• Relatively higher cost per gigabyte compared to lower-capacity alternatives.

Working Principles

The MT41K2G4RKB-107:N operates based on DDR3 SDRAM technology. It stores data in a matrix of capacitors within the memory cells. When a read or write operation is performed, the data is accessed by activating the appropriate row and column addresses. The data is then transferred to or from the memory controller through the module's pins.

Detailed Application Field Plans

The MT41K2G4RKB-107:N is suitable for a wide range of applications, including: - Desktop computers - Laptops and notebooks - Workstations - Servers - High-performance computing clusters

Its high-speed operation and error correction capabilities make it ideal for demanding tasks such as data analysis, virtualization, and scientific simulations.

Detailed and Complete Alternative Models

• MT41K2G4RKB-107: Similar to the MT41K2G4RKB-107:N, but without ECC technology.
• MT41K2G4RKB-106: A variant with a slightly lower speed of 800 MHz.
• MT41K2G4RKB-108: Offers a higher speed of 1333 MHz for increased performance.

These alternative models provide options with varying specifications to suit different requirements and budgets.

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