MT53B256M32D1NP-062 AIT:C TR

Product Overview

Category

The MT53B256M32D1NP-062 AIT:C TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High storage capacity: The MT53B256M32D1NP-062 AIT:C TR offers a large storage capacity, allowing for the storage of a significant amount of data.
• Fast data access: With its high-speed read and write capabilities, this product ensures quick data access and retrieval.
• Low power consumption: The MT53B256M32D1NP-062 AIT:C TR is designed to consume minimal power, making it energy-efficient.
• Compact package: This product comes in a compact package, enabling easy integration into various electronic devices.
• Reliable performance: The MT53B256M32D1NP-062 AIT:C TR is known for its reliable performance and durability.

Package and Quantity

The MT53B256M32D1NP-062 AIT:C TR is packaged in a small form factor, typically a surface-mount package. It is available in different quantities, depending on the specific requirements of the customer or application.

Specifications

• Memory Type: NAND Flash
• Capacity: 256 megabits (32 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 50 megabits per second (Mbps)
• Package Type: Thin Small Outline Package (TSOP)

Pin Configuration

The MT53B256M32D1NP-062 AIT:C TR has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CS: Chip select for SPI interface
4. SCK: Serial clock for SPI interface
5. SI: Serial input for SPI interface
6. SO: Serial output for SPI interface
7. WP: Write protect control
8. HOLD: Hold control

Functional Features

• High-speed data transfer: The MT53B256M32D1NP-062 AIT:C TR offers fast data transfer rates, allowing for efficient read and write operations.
• Error correction: This product incorporates error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The MT53B256M32D1NP-062 AIT:C TR utilizes a wear-leveling algorithm to distribute data evenly across memory cells, extending the lifespan of the product.
• Bad block management: It includes a bad block management system that identifies and manages defective memory blocks, ensuring optimal performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data access
• Low power consumption
• Compact package
• Reliable performance

Disadvantages

• Limited compatibility with certain older devices
• Higher cost compared to lower-capacity memory options

Working Principles

The MT53B256M32D1NP-062 AIT:C TR operates based on the principles of NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. When data is written, electrical charges are stored in the memory cells, representing binary information. During read operations, these charges are detected and converted back into digital data.

Application Field Plans

The MT53B256M32D1NP-062 AIT:C TR finds applications in various electronic devices, including: - Computers and laptops - Smartphones and tablets - Solid-state drives (SSDs) - Digital cameras - Gaming consoles

Alternative Models

For those seeking alternative options, the following models offer similar functionality and specifications to the MT53B256M32D1NP-062 AIT:C TR: - MT53B512M32D2NP-062 AIT:C TR - MT53B128M16D1NP-062 AIT:C TR - MT53B256M16D1NP-062 AIT:C TR

These alternative models provide comparable performance and can be considered as substitutes for the MT53B256M32D1NP-062 AIT:C TR.

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