MT53B512M64D4EZ-062 WT ES:B TR

Product Overview

Category

The MT53B512M64D4EZ-062 WT ES:B TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High storage capacity: The MT53B512M64D4EZ-062 WT ES:B TR offers a storage capacity of 512 megabytes (MB).
• Fast data transfer rate: It supports high-speed data transfer, allowing for efficient read and write operations.
• Low power consumption: This memory device is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT53B512M64D4EZ-062 WT ES:B TR comes in a compact package, enabling easy integration into various electronic devices.
• Reliable performance: It offers reliable performance with robust error correction capabilities.

Package and Quantity

The MT53B512M64D4EZ-062 WT ES:B TR is packaged in a small form factor, typically in a surface-mount technology (SMT) package. It is available in bulk quantities for mass production.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 512 Megabytes (MB) x 64 bits
• Operating Voltage: 1.2V
• Clock Frequency: Up to 800 MHz
• Data Transfer Rate: Up to 1600 Mbps
• Operating Temperature Range: -40°C to +85°C
• Package Dimensions: 78-ball FBGA (Fine-Pitch Ball Grid Array)

Detailed Pin Configuration

The MT53B512M64D4EZ-062 WT ES:B TR has a total of 78 pins arranged in a specific configuration. The pinout diagram below illustrates the pin assignments and their functions:

Functional Features

• Burst Mode Operation: The MT53B512M64D4EZ-062 WT ES:B TR supports burst mode operation, allowing for efficient data transfer.
• Auto Precharge: It automatically precharges memory cells after a read or write operation, optimizing performance.
• On-Die Termination (ODT): This feature helps to reduce signal reflections and improve signal integrity.
• Self-Refresh Mode: The memory device can enter a self-refresh mode to conserve power when not in use.

Advantages and Disadvantages

Advantages

• High storage capacity enables storing large amounts of data.
• Fast data transfer rate ensures quick access to stored information.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.
• Reliable performance with robust error correction capabilities.

Disadvantages

• Limited compatibility with older devices that do not support the specified memory type.
• Higher cost compared to lower-capacity memory options.

Working Principles

The MT53B512M64D4EZ-062 WT ES:B TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, which are periodically refreshed to maintain the stored information. The memory controller synchronizes the read and write operations with the clock signal, ensuring accurate data transfer.

Detailed Application Field Plans

The MT53B512M64D4EZ-062 WT ES:B TR is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Its high storage capacity and fast data transfer rate make it suitable for applications that require extensive data processing and storage.

Alternative Models

For users seeking alternative options, the following models can be considered: - MT53B512M64D4EZ-063 WT ES:B TR - MT53B512M64D4EZ-062 WT ES:C TR - MT53B512M64D4EZ-062 WT ES:B

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable memory device for specific applications.

In conclusion, the MT53B512M64D4EZ-062 WT ES:B TR is a high-capacity semiconductor memory device with fast data transfer capabilities. Its compact package, low power consumption, and reliable performance make it an ideal choice for various electronic devices.