MT53D1024M32D4DT-053 AAT:D

Product Overview

Category

The MT53D1024M32D4DT-053 AAT:D belongs to the category of memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Reliable performance

Package

The MT53D1024M32D4DT-053 AAT:D comes in a compact package that is suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and efficiently.

Packaging/Quantity

Each package of the MT53D1024M32D4DT-053 AAT:D contains a single unit of the product.

Specifications

• Model: MT53D1024M32D4DT-053 AAT:D
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 1024 megabits (128 megabytes)
• Organization: 32M words x 32 bits x 4 banks
• Operating Voltage: 1.2V
• Clock Frequency: Up to 533MHz
• Interface: Double Data Rate 4 (DDR4)
• Package Type: Ball Grid Array (BGA)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT53D1024M32D4DT-053 AAT:D has a specific pin configuration as follows:

• VDD: Power supply voltage
• VSS: Ground
• DQ[31:0]: Data input/output pins
• BA[1:0]: Bank address pins
• A[17:0]: Row/column address pins
• RAS#, CAS#: Row and column address strobe signals
• WE#: Write enable signal
• CK, CK#: Clock input pins
• CKE: Clock enable pin
• CS#: Chip select signal
• DM[3:0]: Data mask pins

Functional Features

The MT53D1024M32D4DT-053 AAT:D offers the following functional features:

• High-speed data transfer
• Low power consumption in standby mode
• Auto-refresh and self-refresh capabilities
• On-die termination for improved signal integrity
• Burst length and burst chop functions for efficient data access

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data access speed
• Low power consumption
• Reliable performance
• Suitable for various electronic devices

Disadvantages

• Relatively higher cost compared to other memory options
• Requires proper handling and installation to prevent damage

Working Principles

The MT53D1024M32D4DT-053 AAT:D operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. The data is accessed by sending appropriate row and column addresses to the memory, enabling the retrieval or storage of specific data.

Detailed Application Field Plans

The MT53D1024M32D4DT-053 AAT:D finds applications in various fields, including but not limited to:

1. Personal computers and laptops
2. Servers and data centers
3. Mobile devices such as smartphones and tablets
4. Networking equipment
5. Automotive electronics
6. Industrial control systems

Detailed and Complete Alternative Models

1. MT53B512M32D2NP-046 WT:B
2. MT53E256M32D2NP-046 WT:B
3. MT53D512M32D2NP-046 WT:B
4. MT53E1G32D2NP-046 WT:B
5. MT53B1G32D2NP-046 WT:B

These alternative models offer similar specifications and functionality to the MT53D1024M32D4DT-053 AAT:D, providing options for different memory capacity requirements.

In conclusion, the MT53D1024M32D4DT-053 AAT:D is a high-performance memory product that offers large storage capacity, fast data access speed, and low power consumption. It finds applications in various electronic devices across different industries.