Micron Technology Inc.
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MT53D256M16D1NY-046 XT ES:B

MT53D256M16D1NY-046 XT ES:B

Product Overview

Category

The MT53D256M16D1NY-046 XT ES:B belongs to the category of memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Compact package size

Package

The MT53D256M16D1NY-046 XT ES:B comes in a small form factor package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently.

Packaging/Quantity

Each package of MT53D256M16D1NY-046 XT ES:B contains a single unit of the memory module.

Specifications

  • Model: MT53D256M16D1NY-046 XT ES:B
  • Memory Type: DDR3 SDRAM
  • Capacity: 256 Megabits (32 Megabytes)
  • Organization: 16M words × 16 bits
  • Speed: 1333 MHz
  • Voltage: 1.5V
  • Operating Temperature Range: -40°C to +85°C
  • RoHS Compliance: Yes

Detailed Pin Configuration

The MT53D256M16D1NY-046 XT ES:B has the following pin configuration:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VDD | Power Supply (1.5V) | | 2 | DQ0 | Data Input/Output Bit 0 | | 3 | DQ1 | Data Input/Output Bit 1 | | ... | ... | ... | | 48 | DQ15 | Data Input/Output Bit 15 | | 49 | VSS | Ground | | 50 | NC | No Connection |

Functional Features

  • High-speed data transfer
  • Burst mode operation
  • Auto-refresh and self-refresh modes
  • On-die termination (ODT) for improved signal integrity
  • Internal calibration for optimal performance

Advantages and Disadvantages

Advantages

  • Fast data transfer speeds
  • Low power consumption
  • Compact package size
  • Reliable performance

Disadvantages

  • Limited storage capacity compared to higher-end memory modules
  • Higher cost per unit compared to lower-capacity alternatives

Working Principles

The MT53D256M16D1NY-046 XT ES:B operates based on DDR3 SDRAM technology. It utilizes a synchronous interface to transfer data between the memory module and the host device. The memory cells store data in a binary format, allowing for quick access and retrieval.

Detailed Application Field Plans

The MT53D256M16D1NY-046 XT ES:B is suitable for a wide range of applications, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Consumer electronics

Detailed and Complete Alternative Models

  • MT53D512M32D2DS-053 XT ES:C
  • MT53D1024M64D4DS-073 XT ES:D
  • MT53D2048M128D8DS-093 XT ES:E
  • MT53D4096M256D16DS-0B3 XT ES:F

These alternative models offer varying capacities and specifications to cater to different application requirements.

In conclusion, the MT53D256M16D1NY-046 XT ES:B is a high-performance memory module that provides fast and reliable data storage and retrieval capabilities. Its compact size, low power consumption, and compatibility with various electronic devices make it a versatile choice for many applications. However, its limited storage capacity and higher cost per unit should be considered when selecting the appropriate memory solution.

技術ソリューションにおける MT53D256M16D1NY-046 XT ES:B の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of MT53D256M16D1NY-046 XT ES:B in technical solutions:

Q1: What is the capacity of the MT53D256M16D1NY-046 XT ES:B memory module? A1: The MT53D256M16D1NY-046 XT ES:B has a capacity of 256 megabits (32 megabytes).

Q2: What is the speed rating of this memory module? A2: The MT53D256M16D1NY-046 XT ES:B operates at a maximum clock frequency of 400 MHz.

Q3: What is the voltage requirement for this memory module? A3: The MT53D256M16D1NY-046 XT ES:B requires a supply voltage of 1.2V.

Q4: Can this memory module be used in mobile devices? A4: Yes, the MT53D256M16D1NY-046 XT ES:B is suitable for use in mobile devices such as smartphones and tablets.

Q5: Does this memory module support ECC (Error Correction Code)? A5: No, the MT53D256M16D1NY-046 XT ES:B does not support ECC.

Q6: What is the operating temperature range for this memory module? A6: The MT53D256M16D1NY-046 XT ES:B has an extended temperature range of -40°C to +95°C.

Q7: Is this memory module compatible with DDR3 or DDR4 interfaces? A7: The MT53D256M16D1NY-046 XT ES:B is compatible with DDR4 interfaces.

Q8: Can this memory module be used in industrial applications? A8: Yes, the MT53D256M16D1NY-046 XT ES:B is suitable for use in industrial applications due to its extended temperature range.

Q9: What is the package type of this memory module? A9: The MT53D256M16D1NY-046 XT ES:B comes in a 96-ball BGA (Ball Grid Array) package.

Q10: Does this memory module support low-power modes? A10: Yes, the MT53D256M16D1NY-046 XT ES:B supports various low-power modes to optimize energy consumption.

Please note that these answers are based on general information about the MT53D256M16D1NY-046 XT ES:B memory module. For specific technical details and application requirements, it is recommended to refer to the manufacturer's datasheet or consult with an expert.