MT53D384M64D4KA-046 XT ES:E TR

Product Overview

Category

The MT53D384M64D4KA-046 XT ES:E TR belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic systems.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Compact package size

Package

The MT53D384M64D4KA-046 XT ES:E TR is packaged in a small, integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

Each package of MT53D384M64D4KA-046 XT ES:E TR contains a single memory module.

Specifications

• Model: MT53D384M64D4KA-046 XT ES:E TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 384 megabytes (MB)
• Organization: 64M words x 4 banks x 8 bits
• Operating Voltage: 1.2 volts (V)
• Clock Frequency: 400 megahertz (MHz)
• Interface: Double Data Rate 4 (DDR4)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT53D384M64D4KA-046 XT ES:E TR has a total of 240 pins arranged in a specific configuration. Please refer to the product datasheet for the detailed pin diagram.

Functional Features

• High-speed data transfer
• Auto-refresh capability
• On-die termination (ODT) for improved signal integrity
• Burst mode operation for efficient data access
• Self-refresh mode for low-power standby operation

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data access speed
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Relatively higher cost compared to other memory technologies
• Sensitive to electrical noise and interference

Working Principles

The MT53D384M64D4KA-046 XT ES:E TR operates based on the principles of dynamic random access memory (DRAM). It stores digital information in a matrix of capacitors, which are periodically refreshed to maintain data integrity. When accessed, the stored data is read or written by applying appropriate voltage levels to the memory cells.

Detailed Application Field Plans

The MT53D384M64D4KA-046 XT ES:E TR finds applications in various electronic systems, including but not limited to: - Personal computers - Servers - Networking equipment - Mobile devices - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. MT53B256M32D2NP-046 WT:B TR

   • Capacity: 256 megabytes (MB)
   • Organization: 32M words x 8 banks x 16 bits
   • Clock Frequency: 400 megahertz (MHz)
   • Interface: DDR4

2. MT53E512M32D2NP-046 WT:A TR

   • Capacity: 512 megabytes (MB)
   • Organization: 32M words x 16 banks x 16 bits
   • Clock Frequency: 400 megahertz (MHz)
   • Interface: DDR4

3. MT53F1G32D4NP-046 WT:C TR

   • Capacity: 1 gigabyte (GB)
   • Organization: 32M words x 32 banks x 16 bits
   • Clock Frequency: 400 megahertz (MHz)
   • Interface: DDR4

These alternative models offer different capacities and organizations to suit various memory requirements.

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Note: The above content is a sample entry for an English editing encyclopedia. The actual content may vary based on the specific product and its characteristics.