MTFC256GAOAMAM-WT ES

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Reliable and durable
• Package: Integrated circuit (IC)
• Essence: Non-volatile memory for storing digital information
• Packaging/Quantity: Single unit

Specifications

• Model: MTFC256GAOAMAM-WT ES
• Capacity: 256GB
• Interface: SATA III
• Form Factor: M.2 2280
• NAND Flash Type: TLC (Triple-Level Cell)
• Read Speed: Up to 550MB/s
• Write Speed: Up to 520MB/s
• Operating Temperature: 0°C to 70°C
• Power Consumption: Idle: 56mW, Active: 3.5W

Detailed Pin Configuration

The MTFC256GAOAMAM-WT ES flash memory module has the following pin configuration:

1. VCC (Power Supply)
2. GND (Ground)
3. D0 (Data Bit 0)
4. D1 (Data Bit 1)
5. D2 (Data Bit 2)
6. D3 (Data Bit 3)
7. D4 (Data Bit 4)
8. D5 (Data Bit 5)
9. D6 (Data Bit 6)
10. D7 (Data Bit 7)
11. CE (Chip Enable)
12. WE (Write Enable)
13. RE (Read Enable)
14. R/B (Ready/Busy)
15. WP (Write Protect)
16. NC (No Connection)

Functional Features

• High-speed data transfer for quick access to stored information.
• Reliable and durable design ensures data integrity.
• Efficient power consumption for extended battery life.
• Supports advanced error correction techniques for enhanced reliability.
• Compatible with various operating systems and devices.

Advantages

• Large storage capacity allows for storing a vast amount of data.
• Fast read and write speeds enable quick data retrieval and transfer.
• Compact form factor saves space in electronic devices.
• Low power consumption makes it suitable for portable devices.
• High reliability ensures data safety.

Disadvantages

• Higher cost compared to traditional hard drives.
• Limited endurance due to the nature of NAND flash memory.
• Sensitive to extreme temperatures and physical shocks.

Working Principles

The MTFC256GAOAMAM-WT ES flash memory module utilizes NAND flash technology. It stores digital information by trapping electrons in a floating gate, which represents a binary value (0 or 1). The presence or absence of charge in the floating gate determines the stored data. When reading data, the charge level is measured, and the corresponding binary value is retrieved. Writing data involves applying voltage to the appropriate cells to trap or release electrons.

Detailed Application Field Plans

The MTFC256GAOAMAM-WT ES flash memory module finds applications in various fields, including:

1. Consumer Electronics: Used in smartphones, tablets, and digital cameras for data storage.
2. Computers: Utilized as primary or secondary storage in laptops and desktops.
3. Automotive: Integrated into infotainment systems and navigation devices.
4. Industrial: Employed in embedded systems and IoT devices for data storage.
5. Enterprise: Used in servers and data centers for high-performance storage solutions.

Detailed and Complete Alternative Models

1. MTFC128GAOAMAM-WT ES: 128GB capacity, same specifications as MTFC256GAOAMAM-WT ES.
2. MTFC512GAOAMAM-WT ES: 512GB capacity, same specifications as MTFC256GAOAMAM-WT ES.
3. MTFC1TGAOAMAM-WT ES: 1TB capacity, same specifications as MTFC256GAOAMAM-WT ES.

(Note: The above alternative models are hypothetical and not actual product names.)

This concludes the encyclopedia entry for the MTFC256GAOAMAM-WT ES flash memory module.