1N4704 (DO35) - Encyclopedia Entry

Introduction

The 1N4704 (DO35) is a diode belonging to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor device
• Use: Rectification, voltage regulation, signal demodulation
• Characteristics: Small size, high reliability, low forward voltage drop
• Package: DO35 glass package
• Essence: Silicon rectifier diode
• Packaging/Quantity: Typically available in reels or bulk packaging

Specifications

• Forward Voltage Drop: 1V max
• Reverse Voltage: 20V
• Forward Current: 200mA
• Operating Temperature Range: -65°C to +175°C
• Storage Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The 1N4704 (DO35) diode has two pins: 1. Anode (A) 2. Cathode (K)

Functional Features

• High reliability and long service life
• Low power loss and fast switching
• Suitable for general-purpose applications
• Compact size for space-constrained designs

Advantages and Disadvantages

Advantages

• Small form factor
• Low forward voltage drop
• Reliable performance
• Wide operating temperature range

Disadvantages

• Limited reverse voltage capability
• Moderate forward current rating

Working Principles

The 1N4704 (DO35) diode operates based on the principle of semiconductor junction behavior. When forward-biased, it allows current flow with minimal voltage drop. In reverse bias, it blocks current flow up to its breakdown voltage.

Detailed Application Field Plans

The 1N4704 (DO35) diode finds applications in various fields, including: - Power supplies - Signal demodulation circuits - Voltage regulation circuits - General rectification purposes

Detailed and Complete Alternative Models

Some alternative models to the 1N4704 (DO35) diode include: - 1N4148 - 1N4001 - 1N5819 - 1N5399 - 1N5408

In conclusion, the 1N4704 (DO35) diode is a versatile semiconductor device suitable for a wide range of applications due to its compact size, reliable performance, and low forward voltage drop.

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