1N979B
Product Overview
Category
The 1N979B belongs to the category of semiconductor diodes.
Use
It is commonly used in electronic circuits for rectification and signal processing.
Characteristics
- Forward voltage drop: Typically around 0.7V
- Reverse leakage current: Low leakage current at reverse bias
- Operating temperature range: -65°C to +175°C
Package
The 1N979B is typically available in a DO-35 glass axial package.
Essence
This diode is essential for converting alternating current (AC) to direct current (DC) in various electronic applications.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Maximum repetitive peak reverse voltage: 100V
- Average forward current: 200mA
- Peak forward surge current: 2A
- Reverse recovery time: 4ns
Detailed Pin Configuration
The 1N979B diode has two pins, anode, and cathode, which are identified by a band marked on the body of the diode.
Functional Features
The 1N979B diode exhibits low forward voltage drop and fast switching characteristics, making it suitable for high-frequency applications.
Advantages and Disadvantages
Advantages
- Low forward voltage drop
- Fast switching speed
- Low reverse leakage current
Disadvantages
- Limited maximum repetitive peak reverse voltage
- Relatively low average forward current rating
Working Principles
The 1N979B operates based on the principles of semiconductor physics, allowing current to flow in one direction while blocking it in the reverse direction.
Detailed Application Field Plans
The 1N979B diode finds extensive use in: - Power supply circuits - Signal demodulation - Voltage clamping circuits - High-frequency rectification
Detailed and Complete Alternative Models
Some alternative models to the 1N979B diode include: - 1N4001 - 1N4148 - 1N5819 - 1N5399
In conclusion, the 1N979B diode is a crucial component in electronic circuits, offering fast switching characteristics and low forward voltage drop. Its application spans across various fields, from power supplies to signal processing, making it a versatile choice for many electronic designs.
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技術ソリューションにおける 1N979B の適用に関連する 10 件の一般的な質問と回答をリストします。
What is 1N979B?
- 1N979B is a silicon switching diode commonly used in electronic circuits for its fast switching speed and low forward voltage drop.
What are the typical applications of 1N979B?
- 1N979B is often used in high-speed switching applications, such as in rectifiers, clippers, and flyback diodes in power supply circuits.
What is the maximum forward current rating of 1N979B?
- The maximum forward current rating of 1N979B is typically around 200mA, making it suitable for low to moderate current applications.
What is the reverse voltage rating of 1N979B?
- The reverse voltage rating of 1N979B is usually around 100V, allowing it to handle moderate reverse voltages in circuit applications.
Can 1N979B be used in high-frequency applications?
- Yes, 1N979B's fast switching speed makes it suitable for use in high-frequency applications such as RF circuits and signal demodulation.
Is 1N979B sensitive to temperature variations?
- Like most semiconductor devices, 1N979B's characteristics can be affected by temperature, so it's important to consider thermal management in its application.
What are the packaging options available for 1N979B?
- 1N979B is commonly available in various package types, including through-hole and surface mount packages, providing flexibility for different circuit designs.
Can 1N979B be used in voltage regulation circuits?
- While 1N979B is not typically used in voltage regulation circuits, it can be employed in protection circuits and transient voltage suppression applications.
What are the key differences between 1N4148 and 1N979B?
- Both are fast switching diodes, but 1N979B generally has a higher forward current rating and lower forward voltage drop compared to 1N4148.
Are there any common failure modes associated with 1N979B?
- Common failure modes for 1N979B include overcurrent conditions leading to thermal breakdown and excessive reverse voltage causing breakdown of the diode junction. Proper circuit protection measures should be implemented to mitigate these risks.