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2N5879

2N5879 Transistor

Product Overview

Category:

The 2N5879 is a high-power NPN silicon transistor.

Use:

It is commonly used in power amplifier and switching applications.

Characteristics:

  • High power handling capability
  • Low collector-emitter saturation voltage
  • Fast switching speed

Package:

The 2N5879 is typically available in a TO-3 metal can package.

Essence:

This transistor is essential for high-power electronic circuits and applications.

Packaging/Quantity:

The 2N5879 is usually sold individually or in small quantities, depending on the supplier.

Specifications

  • Maximum Collector-Emitter Voltage: 80V
  • Maximum Collector Current: 20A
  • Power Dissipation: 150W
  • Transition Frequency: 4MHz

Detailed Pin Configuration

The 2N5879 transistor has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

  • High power amplification capability
  • Fast switching speed
  • Low saturation voltage

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Suitable for high-frequency applications
  • Low collector-emitter saturation voltage

Disadvantages

  • Relatively large package size
  • Limited availability compared to more common transistors

Working Principles

The 2N5879 operates as a current-controlled switch or amplifier. When a small current flows into the base terminal, it controls a much larger current flow between the collector and emitter terminals.

Detailed Application Field Plans

The 2N5879 is commonly used in the following applications: - High-power audio amplifiers - Switching power supplies - RF power amplifiers

Detailed and Complete Alternative Models

Some alternative models to the 2N5879 include: - MJL21193 - 2SC5200 - MJL3281

In conclusion, the 2N5879 transistor is a high-power NPN silicon transistor with excellent power handling capabilities, making it suitable for various high-power electronic applications.

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技術ソリューションにおける 2N5879 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the 2N5879 transistor used for?

    • The 2N5879 transistor is commonly used for high-frequency amplifier and oscillator applications.

  2. What are the key specifications of the 2N5879 transistor?

    • The 2N5879 transistor typically has a maximum power dissipation of 0.5 watts, a collector-base voltage of 30 volts, and a collector current of 50 milliamps.

  3. Can the 2N5879 be used in RF amplifier circuits?

    • Yes, the 2N5879 is suitable for use in RF amplifier circuits due to its high-frequency capabilities.

  4. What are the typical operating frequencies for the 2N5879 transistor?

    • The 2N5879 transistor can operate at frequencies ranging from several megahertz to several gigahertz.

  5. Is the 2N5879 suitable for low-noise amplifier applications?

    • Yes, the 2N5879 can be used as a low-noise amplifier in certain high-frequency applications.

  6. What are the common package types for the 2N5879 transistor?

    • The 2N5879 transistor is often available in metal can or surface-mount packages.

  7. Are there any recommended biasing configurations for the 2N5879?

    • Common biasing configurations for the 2N5879 include common emitter and common base configurations, depending on the specific application requirements.

  8. Can the 2N5879 be used in push-pull amplifier designs?

    • Yes, the 2N5879 can be utilized in push-pull amplifier designs for high-frequency applications.

  9. What are the typical gain characteristics of the 2N5879 transistor?

    • The 2N5879 transistor typically exhibits high gain at high frequencies, making it suitable for amplification purposes.

  10. Are there any known limitations or considerations when using the 2N5879 in technical solutions?

    • It's important to consider the operating frequency range, power dissipation, and voltage/current ratings to ensure proper performance and reliability in technical solutions.