JAN1N3768
Product Overview
- Category: Diode
- Use: Rectification and voltage regulation
- Characteristics: High current capability, low forward voltage drop
- Package: DO-41
- Essence: Silicon rectifier diode
- Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Voltage Rating: 100V
- Current Rating: 10A
- Forward Voltage Drop: 1V at 10A
- Reverse Leakage Current: 5µA at 80V
Detailed Pin Configuration
The JAN1N3768 diode has two pins, anode (A) and cathode (K). The anode is connected to the positive terminal of the circuit, while the cathode is connected to the negative terminal.
Functional Features
- High current capability allows for efficient power handling
- Low forward voltage drop minimizes power loss
- Fast switching characteristics enable rapid response in circuits
Advantages and Disadvantages
Advantages
- High current rating
- Low forward voltage drop
- Fast switching speed
Disadvantages
- Higher reverse leakage current compared to some alternative models
- Limited voltage rating compared to higher voltage diodes
Working Principles
The JAN1N3768 operates based on the principle of semiconductor junction behavior. When a forward bias is applied, it allows current to flow with minimal resistance. In reverse bias, it blocks the flow of current, exhibiting high resistance.
Detailed Application Field Plans
The JAN1N3768 diode finds applications in various fields such as: - Power supplies - Voltage regulators - Rectifiers in electronic circuits - Motor drive circuits
Detailed and Complete Alternative Models
Some alternative models to JAN1N3768 include: - 1N4001: Lower current rating but higher voltage capability - 1N5408: Higher current and voltage ratings - 1N5819: Schottky diode with lower forward voltage drop
In conclusion, the JAN1N3768 diode is a versatile component with high current capability and low forward voltage drop, making it suitable for various rectification and voltage regulation applications.
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技術ソリューションにおける JAN1N3768 の適用に関連する 10 件の一般的な質問と回答をリストします。
What is JAN1N3768?
- JAN1N3768 is a high-reliability, military-grade silicon power rectifier diode.
What are the key specifications of JAN1N3768?
- The key specifications include a maximum repetitive peak reverse voltage of 200 volts, average forward current of 35 amps, and a forward voltage drop of 1.0 volt at 35 amps.
In what technical solutions can JAN1N3768 be used?
- JAN1N3768 can be used in various technical solutions such as power supplies, inverters, battery chargers, and other high-reliability applications.
What are the advantages of using JAN1N3768 in technical solutions?
- The advantages include its high reliability, rugged construction, and ability to withstand high surge currents and temperatures.
What are the temperature considerations for JAN1N3768?
- JAN1N3768 has an operating temperature range of -65°C to +175°C, making it suitable for harsh environments.
Is JAN1N3768 suitable for high-frequency applications?
- No, JAN1N3768 is not recommended for high-frequency applications due to its relatively slow recovery time.
Can JAN1N3768 be used in automotive applications?
- Yes, JAN1N3768 can be used in certain automotive applications where high reliability and ruggedness are required.
What are the packaging options available for JAN1N3768?
- JAN1N3768 is available in various package types including DO-4, DO-5, and other military-standard packages.
Are there any specific handling or mounting requirements for JAN1N3768?
- JAN1N3768 should be handled and mounted according to standard semiconductor handling procedures to avoid damage.
Where can JAN1N3768 be sourced from?
- JAN1N3768 can be sourced from authorized distributors of military-grade electronic components or directly from manufacturers specializing in high-reliability diodes.