Microsemi Corporation
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
JAN1N6109US
詳細を表示 DataSheets

JAN1N6109US

Product Overview

  • Category: Diode
  • Use: Rectification and voltage regulation
  • Characteristics: High current capability, low forward voltage drop
  • Package: DO-41
  • Essence: Silicon rectifier diode
  • Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Forward Voltage Drop: 0.7V
  • Reverse Voltage: 100V
  • Forward Current: 3A
  • Operating Temperature: -65°C to +175°C

Detailed Pin Configuration

The JAN1N6109US diode has two pins, with the anode connected to the positive terminal and the cathode connected to the negative terminal.

Functional Features

  • High current carrying capability
  • Low forward voltage drop
  • Fast switching speed

Advantages

  • Reliable and durable
  • Suitable for high current applications
  • Low power loss

Disadvantages

  • Sensitive to temperature variations
  • Limited reverse voltage tolerance

Working Principles

The JAN1N6109US diode operates on the principle of allowing current to flow in one direction while blocking it in the opposite direction. When a positive voltage is applied to the anode with respect to the cathode, the diode conducts, allowing current to flow. In the reverse bias condition, the diode blocks the current flow.

Detailed Application Field Plans

  • Power supplies
  • Voltage regulators
  • Rectifiers in electronic circuits
  • Battery charging circuits

Detailed and Complete Alternative Models

  • 1N4001
  • 1N5408
  • 1N5819
  • 1N4148

This completes the entry for JAN1N6109US, providing comprehensive information about its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

技術ソリューションにおける JAN1N6109US の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum forward voltage of JAN1N6109US?

    • The maximum forward voltage of JAN1N6109US is 1.2V at a forward current of 200mA.

  2. What is the reverse breakdown voltage of JAN1N6109US?

    • The reverse breakdown voltage of JAN1N6109US is 100V.

  3. What is the typical junction capacitance of JAN1N6109US?

    • The typical junction capacitance of JAN1N6109US is 15pF at a reverse bias of 4V and a frequency of 1MHz.

  4. What is the maximum forward current of JAN1N6109US?

    • The maximum forward current of JAN1N6109US is 200mA.

  5. What is the operating temperature range of JAN1N6109US?

    • The operating temperature range of JAN1N6109US is -65°C to +175°C.

  6. What are the typical applications for JAN1N6109US?

    • Typical applications for JAN1N6109US include high-speed switching, voltage clamping, protection circuits, and high-frequency rectification.

  7. What is the package type of JAN1N6109US?

    • JAN1N6109US is available in a DO-35 package.

  8. Does JAN1N6109US have any special handling requirements?

    • JAN1N6109US should be handled with standard ESD precautions to avoid damage.

  9. What is the reverse leakage current of JAN1N6109US?

    • The reverse leakage current of JAN1N6109US is typically 5µA at the maximum rated voltage.

  10. Is JAN1N6109US RoHS compliant?

    • Yes, JAN1N6109US is RoHS compliant, making it suitable for use in environmentally friendly electronic products.