JAN1N6166US

Product Overview

Category: Semiconductor Diode
Use: Rectification and voltage regulation
Characteristics: High current capability, low forward voltage drop
Package: DO-41 axial leaded package
Essence: Efficient rectification and voltage regulation
Packaging/Quantity: Available in reels or bulk packaging

Specifications

Forward Voltage Drop: 0.7V
Reverse Voltage: 200V
Average Forward Current: 1A
Peak Surge Current: 30A
Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The JAN1N6166US is a two-terminal device with an anode and a cathode. In the DO-41 package, the anode is connected to the longer lead while the cathode is connected to the shorter lead.

Functional Features

High current capability for efficient power handling
Low forward voltage drop for minimal power loss
Fast switching speed for rapid response to input changes

Advantages and Disadvantages

Advantages: - High current capability allows for robust performance - Low forward voltage drop minimizes power dissipation - Fast switching speed enables quick response to input changes

Disadvantages: - Higher reverse recovery time compared to some alternative models - Limited peak surge current compared to higher-rated diodes

Working Principles

The JAN1N6166US operates based on the principles of semiconductor physics. When forward biased, it allows current to flow with a low voltage drop. When reverse biased, it blocks the flow of current, providing effective rectification and voltage regulation.

Detailed Application Field Plans

Power supply units
Voltage regulators
Rectifier circuits
Switching power supplies
Automotive electronics

Detailed and Complete Alternative Models

1N4007: Similar characteristics but lower current rating
1N5408: Higher current rating and voltage, larger package size
FR107: Fast recovery diode with lower forward voltage drop

This comprehensive entry provides an in-depth understanding of the JAN1N6166US semiconductor diode, covering its specifications, features, applications, and alternatives.

技術ソリューションにおける JAN1N6166US の適用に関連する 10 件の一般的な質問と回答をリストします。

What is JAN1N6166US?
- JAN1N6166US is a high-reliability, military-grade semiconductor diode used in various technical solutions.
What are the key specifications of JAN1N6166US?
- The JAN1N6166US diode has a maximum repetitive peak reverse voltage of 200 volts, a forward current of 3 amps, and a forward voltage drop of 1.1 volts at 3 amps.
In what applications can JAN1N6166US be used?
- JAN1N6166US is commonly used in power supply circuits, voltage regulation, and general-purpose rectification in military and aerospace applications.
What are the temperature ratings for JAN1N6166US?
- The JAN1N6166US diode is rated to operate within a temperature range of -65°C to +175°C.
Is JAN1N6166US suitable for high-reliability applications?
- Yes, JAN1N6166US is designed for high-reliability applications and meets stringent military standards for performance and reliability.
Can JAN1N6166US be used in commercial applications?
- While JAN1N6166US is primarily intended for military and aerospace use, it can also be utilized in certain commercial applications where high reliability is required.
What are the packaging options available for JAN1N6166US?
- JAN1N6166US is available in various package types, including axial-lead, surface-mount, and chip form, providing flexibility for different design requirements.
Does JAN1N6166US have any special handling or storage requirements?
- JAN1N6166US should be stored in a cool, dry environment and handled according to standard ESD (electrostatic discharge) precautions to maintain its reliability.
Are there any recommended alternative diodes to JAN1N6166US?
- Depending on specific application requirements, alternatives such as JAN1N5806US or JAN1N5804US may be considered as substitutes for JAN1N6166US.
Where can I find detailed technical documentation for JAN1N6166US?
- Detailed technical specifications and application notes for JAN1N6166US can be found on the manufacturer's website or through authorized distributors.