BUK9GTHP-55PJTR,51

Product Overview

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

High power handling capability
Low on-state resistance
Fast switching speed
Low gate drive power required

Package

The BUK9GTHP-55PJTR,51 is typically available in a TO-220AB package.

Essence

The essence of this product lies in its ability to efficiently control and switch high power loads in electronic systems.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 55V
Continuous Drain Current (ID): 60A
On-State Resistance (RDS(on)): 8.5 mΩ
Power Dissipation (PD): 200W
Gate-Source Voltage (VGS): ±20V

Detailed Pin Configuration

The BUK9GTHP-55PJTR,51 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High current-carrying capability
Low conduction losses
Fast switching times
Robustness against thermal and electrical stress

Advantages

Efficient power handling
Reduced heat dissipation
Enhanced system reliability
Suitable for high-frequency applications

Disadvantages

Sensitive to electrostatic discharge (ESD)
Requires careful handling during assembly

Working Principles

The BUK9GTHP-55PJTR,51 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is widely used in: - Switch-mode power supplies - Motor control circuits - Automotive electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to the BUK9GTHP-55PJTR,51 include: - IRF3205 - FDP8878 - STP80NF55-06

In conclusion, the BUK9GTHP-55PJTR,51 power MOSFET offers high-performance characteristics and is widely utilized in various electronic applications for efficient power management and control.

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技術ソリューションにおける BUK9GTHP-55PJTR,51 の適用に関連する 10 件の一般的な質問と回答をリストします。

What is BUK9GTHP-55PJTR,51?
- BUK9GTHP-55PJTR,51 is a N-channel 55 V MOSFET with a low on-state resistance, designed for use in various technical solutions.
What are the key specifications of BUK9GTHP-55PJTR,51?
- The key specifications include a maximum drain-source voltage of 55 V, a continuous drain current of 75 A, and a low on-state resistance.
In what applications can BUK9GTHP-55PJTR,51 be used?
- BUK9GTHP-55PJTR,51 can be used in applications such as power management, motor control, and DC-DC converters.
What is the typical on-state resistance of BUK9GTHP-55PJTR,51?
- The typical on-state resistance of BUK9GTHP-55PJTR,51 is around 5.5 mΩ.
Does BUK9GTHP-55PJTR,51 require any special heat dissipation considerations?
- Due to its high current handling capability, BUK9GTHP-55PJTR,51 may require appropriate heat sinking or thermal management in high-power applications.
Is BUK9GTHP-55PJTR,51 suitable for automotive applications?
- Yes, BUK9GTHP-55PJTR,51 is suitable for automotive applications due to its robustness and reliability.
What are the recommended operating conditions for BUK9GTHP-55PJTR,51?
- The recommended operating conditions include a maximum drain-source voltage of 55 V and a continuous drain current within the specified limits.
Can BUK9GTHP-55PJTR,51 be used in switching applications?
- Yes, BUK9GTHP-55PJTR,51 can be used in high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
Are there any application notes or reference designs available for using BUK9GTHP-55PJTR,51?
- Yes, application notes and reference designs are available to assist in the proper utilization of BUK9GTHP-55PJTR,51 in various technical solutions.
Where can I find detailed technical documentation for BUK9GTHP-55PJTR,51?
- Detailed technical documentation, including datasheets and application notes, can be found on the manufacturer's website or through authorized distributors.