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2N7002ET3G
Product Category: Semiconductor - MOSFET
Basic Information Overview: - Category: 2N7002ET3G belongs to the category of small-signal MOSFETs. - Use: It is commonly used as a switch in electronic circuits, especially in low-power applications. - Characteristics: This MOSFET features low on-state resistance, fast switching speed, and low gate threshold voltage. - Package: The 2N7002ET3G is typically available in a SOT-23 package. - Essence: Its essence lies in providing efficient and reliable switching capabilities in various electronic circuits. - Packaging/Quantity: It is often supplied in reels or tubes containing a specific quantity, such as 3000 units per reel.
Specifications: - Drain-Source Voltage (VDS): 60V - Continuous Drain Current (ID): 115mA - On-State Resistance (RDS(on)): 5 Ohms - Gate-Source Threshold Voltage (VGS(th)): 1-2.5V - Power Dissipation (PD): 200mW
Detailed Pin Configuration: The 2N7002ET3G typically has three pins: Gate (G), Drain (D), and Source (S).
Functional Features: - Fast switching speed - Low gate threshold voltage - Low on-state resistance
Advantages and Disadvantages: - Advantages: - Efficient switching performance - Small form factor - Low power consumption - Disadvantages: - Limited maximum voltage and current ratings - Sensitivity to static electricity
Working Principles: When a sufficient voltage is applied to the gate terminal, the MOSFET allows current to flow between the drain and source terminals, effectively acting as a switch in the circuit.
Detailed Application Field Plans: - Low-Power Circuits: Used as a switch in battery-powered devices, sensor circuits, and other low-power applications. - Signal Amplification: Employed in audio amplifiers and signal processing circuits. - Voltage Regulation: Utilized in voltage regulation circuits for controlling power delivery.
Detailed and Complete Alternative Models: - BS170: Similar small-signal MOSFET with comparable specifications. - IRLML2502: MOSFET with low threshold voltage and high current capability.
This comprehensive entry provides an in-depth understanding of the 2N7002ET3G MOSFET, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
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技術ソリューションにおける 2N7002ET3G の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure, here are 10 common questions and answers related to the application of 2N7002ET3G in technical solutions:
What is the maximum drain-source voltage rating of 2N7002ET3G?
- The maximum drain-source voltage rating of 2N7002ET3G is 60V.
What is the continuous drain current rating of 2N7002ET3G?
- The continuous drain current rating of 2N7002ET3G is 310mA.
Can 2N7002ET3G be used for low-power switching applications?
- Yes, 2N7002ET3G is suitable for low-power switching applications due to its low threshold voltage and low on-resistance.
What is the typical threshold voltage of 2N7002ET3G?
- The typical threshold voltage of 2N7002ET3G is around 2.1V.
Is 2N7002ET3G suitable for level shifting applications?
- Yes, 2N7002ET3G can be used for level shifting applications due to its compatibility with different logic levels.
What is the maximum junction temperature of 2N7002ET3G?
- The maximum junction temperature of 2N7002ET3G is 150°C.
Can 2N7002ET3G be used in battery-powered applications?
- Yes, 2N7002ET3G is suitable for battery-powered applications due to its low threshold voltage and low power consumption.
Does 2N7002ET3G have ESD protection?
- Yes, 2N7002ET3G is designed with ESD protection to ensure reliability in various applications.
What are the typical input and output capacitances of 2N7002ET3G?
- The typical input capacitance is 20pF, and the typical output capacitance is 35pF for 2N7002ET3G.
Is 2N7002ET3G RoHS compliant?
- Yes, 2N7002ET3G is RoHS compliant, making it suitable for environmentally friendly designs and applications.