2SB1203S-TL-E

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current and voltage capabilities, low power consumption - Package: SOT-89 package - Essence: NPN silicon transistor - Packaging/Quantity: Available in reels of 3000 units

Specifications: - Collector-Base Voltage (VCBO): 50V - Collector-Emitter Voltage (VCEO): 45V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 1.5A - Power Dissipation (PD): 1W - Transition Frequency (fT): 150MHz - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1 (Emitter): Connected to the emitter region of the transistor - Pin 2 (Base): Connected to the base region of the transistor - Pin 3 (Collector): Connected to the collector region of the transistor

Functional Features: - High current gain - Low saturation voltage - Fast switching speed

Advantages: - Small form factor - Suitable for high-frequency applications - Low noise performance

Disadvantages: - Limited power dissipation capability - Susceptible to thermal runaway at high currents

Working Principles: The 2SB1203S-TL-E operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplification circuits - Switching power supplies - RF amplifiers

Detailed and Complete Alternative Models: - 2SB1203-TL-E - 2SB1203S-TL-H - 2N3904

This comprehensive entry provides a detailed overview of the 2SB1203S-TL-E transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.