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2SJ661-1E Product Overview
Introduction
The 2SJ661-1E is a semiconductor product belonging to the category of power MOSFETs. This component is widely used in electronic circuits for its specific characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Electronic circuitry
- Characteristics: High power handling, low on-resistance, fast switching speed
- Package: TO-220AB
- Essence: Power control and amplification
- Packaging/Quantity: Typically packaged in reels or tubes, quantity varies by manufacturer
Specifications
- Voltage Rating: [Specify voltage rating]
- Current Rating: [Specify current rating]
- On-Resistance: [Specify on-resistance]
- Gate Threshold Voltage: [Specify gate threshold voltage]
- Operating Temperature Range: [Specify operating temperature range]
Detailed Pin Configuration
The 2SJ661-1E typically features three pins:
1. Gate (G): Control terminal for the MOSFET
2. Drain (D): Connection for the load
3. Source (S): Connection to ground
Functional Features
- High power handling capability
- Low on-resistance for efficient power transfer
- Fast switching speed for rapid response in circuits
Advantages and Disadvantages
Advantages
- Efficient power handling
- Fast switching speed
- Low on-resistance
Disadvantages
- Sensitivity to static electricity
- Gate capacitance may affect high-frequency performance
Working Principles
The 2SJ661-1E operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The 2SJ661-1E finds extensive use in various applications, including:
- Power supplies
- Motor control
- Audio amplifiers
- LED lighting systems
Detailed and Complete Alternative Models
- [Alternative Model 1]
- [Alternative Model 2]
- [Alternative Model 3]
In conclusion, the 2SJ661-1E power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it a versatile component in modern circuit design.
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技術ソリューションにおける 2SJ661-1E の適用に関連する 10 件の一般的な質問と回答をリストします。
What is the 2SJ661-1E?
- The 2SJ661-1E is a P-channel MOSFET transistor designed for high-speed switching applications.
What are the key features of the 2SJ661-1E?
- The 2SJ661-1E features low on-state resistance, high-speed switching, and low drive power requirements.
What are the typical applications of the 2SJ661-1E?
- Typical applications include power management in portable devices, motor control, and high-frequency DC-DC converters.
What is the maximum drain-source voltage of the 2SJ661-1E?
- The maximum drain-source voltage is typically around 60V.
What is the maximum drain current of the 2SJ661-1E?
- The maximum drain current is typically around 6A.
What is the gate-source voltage range for proper operation of the 2SJ661-1E?
- The gate-source voltage range is typically around ±20V.
What are the thermal characteristics of the 2SJ661-1E?
- The thermal resistance from junction to ambient is typically around 125°C/W.
What are the recommended operating temperature range for the 2SJ661-1E?
- The recommended operating temperature range is typically between -55°C to 150°C.
What are the package dimensions of the 2SJ661-1E?
- The 2SJ661-1E is typically available in a TO-220 package.
Where can I find the detailed datasheet for the 2SJ661-1E?
- The detailed datasheet for the 2SJ661-1E can be found on the manufacturer's website or through authorized distributors.