ATP114-TL-H

Product Overview

Belongs to: Electronic Components
Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: High voltage, low power consumption
Package: TO-220
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Bulk/100 units per pack

Specifications

• Voltage - Collector Emitter Breakdown (Max): 400V
• Current - Collector (Ic) (Max): 1A
• Power - Max: 40W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
• Frequency - Transition: 30MHz
• Operating Temperature: -55°C ~ 150°C

Detailed Pin Configuration

1. Base
2. Collector
3. Emitter

Functional Features

• High voltage capability
• Low spread of dynamic parameters
• Very high switching speed

Advantages

• Suitable for use in high-voltage applications
• Low power consumption
• Fast switching speed

Disadvantages

• Limited current-carrying capacity
• Sensitive to temperature variations

Working Principles

ATP114-TL-H operates based on the principles of amplification and control of electronic signals. When a small current is applied to the base terminal, it controls the larger current flow between the collector and emitter terminals.

Detailed Application Field Plans

This transistor is commonly used in audio amplifiers, voltage regulators, and electronic switches due to its high voltage capability and fast switching speed. It is also utilized in power supply circuits and electronic control systems.

Detailed and Complete Alternative Models

• BC337
• 2N3904
• 2N2222

The ATP114-TL-H transistor offers high voltage capability and fast switching speed, making it suitable for various electronic applications. However, its limited current-carrying capacity and sensitivity to temperature variations should be considered when selecting it for specific projects.

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