CAV24C16WE-GT3

Product Overview

Category

The CAV24C16WE-GT3 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This chip is primarily used for non-volatile data storage in various electronic devices such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• Electrically erasable: The chip allows for easy modification of stored data through electrical signals.
• Programmable: Users can write and rewrite data multiple times.
• High density: The chip offers a storage capacity of 16 kilobits (2 kilobytes).
• Low power consumption: It operates on low voltage and consumes minimal power during read and write operations.

Package

The CAV24C16WE-GT3 is available in a small form factor package, typically measuring 8-pin SOIC (Small Outline Integrated Circuit).

Essence

The essence of this chip lies in its ability to provide reliable and flexible non-volatile data storage in electronic devices.

Packaging/Quantity

The CAV24C16WE-GT3 is commonly packaged in reels or tubes, with each reel containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 16 kilobits (2 kilobytes)
• Supply Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Interface: I2C (Inter-Integrated Circuit)
• Write Cycle Time: 5 ms (maximum)
• Data Retention: 200 years (minimum)

Detailed Pin Configuration

The CAV24C16WE-GT3 features an 8-pin SOIC package with the following pin configuration:

1. VCC: Power supply voltage
2. SDA: Serial data input/output for I2C communication
3. SCL: Serial clock input for I2C communication
4. WP: Write protect pin (optional)
5. A0: Address bit 0
6. A1: Address bit 1
7. GND: Ground reference
8. NC: No connection

Functional Features

• Random Access: Allows direct access to any memory location for read and write operations.
• Byte-Level Read/Write: Enables reading and writing of individual bytes within the memory array.
• Page Write: Supports writing multiple bytes at once, enhancing efficiency.
• Software Write Protection: Provides a write protection mechanism to prevent accidental modification of stored data.
• Self-Timed Programming Cycle: Automatically manages the timing of write and erase operations, simplifying the programming process.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity even during power loss.
• High-density memory capacity allows for storing a significant amount of data.
• Low power consumption makes it suitable for battery-powered devices.
• Flexible interface (I2C) enables easy integration with various microcontrollers and systems.
• Software write protection enhances data security.

Disadvantages

• Limited storage capacity compared to other memory technologies like flash memory.
• Relatively slower write cycle time may impact performance in certain applications.
• Susceptible to electromagnetic interference (EMI) due to its small form factor.

Working Principles

The CAV24C16WE-GT3 utilizes an electrically erasable floating-gate transistor technology. It stores data by trapping electrical charges in the floating gate, which alters the transistor's behavior. The trapped charges represent binary information (0 or 1). During read operations, the chip applies appropriate voltages to determine the charge state of each memory cell, retrieving the stored data.

Detailed Application Field Plans

The CAV24C16WE-GT3 finds applications in various fields, including:

1. Embedded Systems: Used for firmware storage in microcontrollers and system-on-chips (SoCs).
2. Industrial Automation: Enables configuration storage and parameter settings in industrial control systems.
3. Automotive Electronics: Utilized for storing critical data such as calibration values and vehicle settings.
4. Consumer Electronics: Found in devices like smart TVs, set-top boxes, and gaming consoles for data storage purposes.
5. Internet of Things (IoT): Supports non-volatile memory requirements in IoT devices, such as sensors and smart home appliances.

Detailed and Complete Alternative Models

1. AT24C16: Manufactured by Atmel, this 16-kilobit EEPROM chip offers similar features and pin compatibility with the CAV24C16WE-GT3.
2. CAT24C16: Produced by ON Semiconductor, this electrically erasable memory chip provides a comparable capacity and interface to the CAV24C16WE-GT3.
3. M24C16: Manufact