FDB86360_SN00307 Product Overview

Introduction

The FDB86360_SN00307 is a semiconductor device belonging to the category of power MOSFETs. This product is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Electronic applications requiring high power switching
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-263-7L
• Essence: Efficient power management
• Packaging/Quantity: Available in reels of 2500 units

Specifications

• Voltage Rating: 600V
• Current Rating: 30A
• On-Resistance: 80mΩ
• Gate Charge: 45nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The FDB86360_SN00307 features a TO-263-7L package with the following pin configuration: 1. Gate 2. Drain 3. Source 4. N/C 5. Source 6. Drain 7. Gate

Functional Features

• High voltage capability for power applications
• Low on-resistance for minimal power loss
• Fast switching speed for efficient operation

Advantages and Disadvantages

Advantages: - High voltage capability - Low on-resistance - Fast switching speed

Disadvantages: - Sensitive to overvoltage conditions - Limited current handling compared to some alternatives

Working Principles

The FDB86360_SN00307 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

This power MOSFET is suitable for a wide range of applications including: - Switching power supplies - Motor control - Inverters - LED lighting - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to consider include: - IRF840 - STP55NF06L - AUIRF1404Z

In conclusion, the FDB86360_SN00307 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various electronic applications requiring efficient power management.

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