FQB19N10TM - Product Overview

Introduction

The FQB19N10TM is a power MOSFET belonging to the category of electronic components. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Components
• Use: Power MOSFET for electronic circuits
• Characteristics: High power handling capacity, low on-resistance, fast switching speed
• Package: TO-263-3 (D2PAK) package
• Essence: Efficient power management and control
• Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

• Voltage Rating: 100V
• Current Rating: 19A
• On-Resistance: 0.019 ohms
• Gate-Source Voltage (Max): ±20V
• Operating Temperature Range: -55°C to 175°C
• Mounting Type: Surface Mount

Detailed Pin Configuration

The FQB19N10TM follows the standard pin configuration for a TO-263-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High power handling capability
• Low on-resistance for reduced power losses
• Fast switching speed for efficient operation
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

• High power handling capacity
• Low on-resistance for improved efficiency
• Fast switching speed for rapid response
• Reliable thermal performance

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The FQB19N10TM operates based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFETs). When a voltage is applied to the gate terminal, it controls the flow of current between the source and drain terminals, enabling efficient power management and control within electronic circuits.

Detailed Application Field Plans

The FQB19N10TM finds extensive applications in various electronic systems, including: - Switching power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - Automotive electronics

Detailed and Complete Alternative Models

• Alternative Model 1: FQPF19N10
• Alternative Model 2: IRF540N
• Alternative Model 3: STP19NM60N

In conclusion, the FQB19N10TM power MOSFET offers high power handling capacity, low on-resistance, and fast switching speed, making it suitable for diverse electronic applications. Its efficient working principles and versatile application field plans make it a valuable component in modern electronic designs.

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