FQP3N25

Product Overview

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The FQP3N25 is typically available in a TO-220 package.

Essence

This MOSFET is essential for controlling high-power applications efficiently.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on supplier specifications.

Specifications

Drain-Source Voltage (VDS): 250V
Continuous Drain Current (ID): 3A
On-Resistance (RDS(on)): 1.2Ω
Power Dissipation (PD): 30W
Gate-Source Voltage (VGS): ±20V

Detailed Pin Configuration

The FQP3N25 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage capability allows for use in various power applications.
Low on-resistance minimizes power loss and improves efficiency.
Fast switching speed enables rapid control of current flow.

Advantages

Suitable for high-voltage applications
Low power dissipation
Fast switching speed

Disadvantages

Relatively low continuous drain current compared to other MOSFETs
Higher on-resistance than some alternative models

Working Principles

The FQP3N25 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The FQP3N25 is commonly used in: - Switching power supplies - Motor control circuits - LED lighting applications - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the FQP3N25 include: - IRF540 - STP3NB90 - FDP7030L

In conclusion, the FQP3N25 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power applications. While it has certain disadvantages such as lower continuous drain current and higher on-resistance compared to some alternatives, its functional features and working principles make it a valuable component in electronic circuits.

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技術ソリューションにおける FQP3N25 の適用に関連する 10 件の一般的な質問と回答をリストします。

What is FQP3N25?
- FQP3N25 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications.
What are the key specifications of FQP3N25?
- The key specifications include a drain-source voltage (VDS) of 250V, continuous drain current (ID) of 3A, and low on-resistance (RDS(on)).
In what technical solutions can FQP3N25 be used?
- FQP3N25 can be used in power supplies, motor control, lighting control, and other high-speed switching applications.
What are the advantages of using FQP3N25 in technical solutions?
- FQP3N25 offers low on-resistance, high-speed switching capabilities, and high voltage tolerance, making it suitable for various power management applications.
How does FQP3N25 compare to other MOSFETs in its class?
- FQP3N25 offers competitive performance in terms of on-resistance, voltage rating, and switching speed compared to other MOSFETs in its class.
What are the typical operating conditions for FQP3N25?
- FQP3N25 operates within a temperature range of -55°C to 150°C and is typically driven with a gate-source voltage (VGS) of 10V.
Can FQP3N25 be used in automotive applications?
- Yes, FQP3N25 can be used in automotive applications where high-voltage switching and efficient power management are required.
Are there any application notes or reference designs available for using FQP3N25?
- Yes, application notes and reference designs are available from the manufacturer to assist in the proper implementation of FQP3N25 in technical solutions.
What considerations should be taken into account when designing with FQP3N25?
- Designers should consider thermal management, gate drive requirements, and protection circuitry to ensure reliable and efficient operation of FQP3N25 in their applications.
Where can I purchase FQP3N25 for my technical solution?
- FQP3N25 can be purchased from authorized distributors or directly from the manufacturer's website.