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FQP3N80C

FQP3N80C

Introduction

The FQP3N80C is a power MOSFET belonging to the category of electronic components. It is commonly used in various electronic circuits and applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Electronic circuits, power control applications
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-220
  • Essence: Efficient power management
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 800V
  • Current Rating: 3A
  • On-Resistance: 3.8Ω
  • Gate Threshold Voltage: 2-4V
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The FQP3N80C features a standard TO-220 pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

  • High voltage capability allows for use in diverse applications
  • Low on-resistance minimizes power losses
  • Fast switching speed enables efficient power control

Advantages and Disadvantages

Advantages

  • Suitable for high voltage applications
  • Low conduction losses
  • Fast switching speed
  • Reliable performance

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The FQP3N80C operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, the device allows or blocks the flow of current between the drain and source terminals.

Detailed Application Field Plans

The FQP3N80C finds extensive use in various applications, including: - Switching power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - Voltage regulators

Detailed and Complete Alternative Models

  • IRF840: Similar voltage and current ratings
  • STP3NB80: Comparable specifications and package type
  • FQPF3N80C: Equivalent performance characteristics

In conclusion, the FQP3N80C power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for diverse electronic applications.

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技術ソリューションにおける FQP3N80C の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage of FQP3N80C?

    • The maximum drain-source voltage of FQP3N80C is 800 volts.
  2. What is the continuous drain current rating of FQP3N80C?

    • The continuous drain current rating of FQP3N80C is 3.3 amperes.
  3. What is the on-state resistance (RDS(on)) of FQP3N80C?

    • The on-state resistance (RDS(on)) of FQP3N80C is typically 4.5 ohms.
  4. Can FQP3N80C be used in high-frequency switching applications?

    • Yes, FQP3N80C can be used in high-frequency switching applications due to its fast switching characteristics.
  5. Is FQP3N80C suitable for power supply and inverter circuits?

    • Yes, FQP3N80C is suitable for power supply and inverter circuits due to its high voltage and current ratings.
  6. What is the maximum junction temperature of FQP3N80C?

    • The maximum junction temperature of FQP3N80C is 150°C.
  7. Does FQP3N80C have built-in protection features?

    • FQP3N80C does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
  8. What are the typical applications of FQP3N80C in technical solutions?

    • Typical applications of FQP3N80C include electronic ballasts, switch mode power supplies, motor control, and lighting systems.
  9. What are the recommended operating conditions for FQP3N80C?

    • The recommended operating conditions for FQP3N80C include a maximum drain-source voltage of 800V, a continuous drain current of 3.3A, and a maximum junction temperature of 150°C.
  10. Are there any specific layout considerations when using FQP3N80C in a technical solution?

    • It is important to ensure proper heat sinking and PCB layout to manage the heat dissipation and minimize parasitic inductance when using FQP3N80C in a technical solution.