ON Semiconductor
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
MMBT4403WT1G
詳細を表示 DataSheets

MMBT4403WT1G

Introduction

The MMBT4403WT1G is a general-purpose PNP bipolar junction transistor (BJT) belonging to the category of electronic components. This transistor is commonly used in amplification and switching applications due to its high current gain and low saturation voltage. The MMBT4403WT1G is known for its compact package, versatile characteristics, and wide range of applications.

Basic Information Overview

  • Category: Electronic Component
  • Use: Amplification and Switching
  • Characteristics: High current gain, Low saturation voltage
  • Package: SOT-23
  • Essence: PNP BJT Transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): -40V
  • Collector-Emitter Voltage (VCEO): -40V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -600mA
  • Total Power Dissipation (Ptot): 350mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High current gain
  • Low noise
  • Fast switching speed
  • Small footprint

Advantages and Disadvantages

Advantages

  • Versatile applications
  • Compact package
  • High transition frequency

Disadvantages

  • Limited collector current compared to other transistors
  • Relatively low power dissipation capability

Working Principles

The MMBT4403WT1G operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small input current at the base terminal, resulting in a larger output current between the collector and emitter terminals. This allows for amplification and switching functions in various electronic circuits.

Detailed Application Field Plans

The MMBT4403WT1G finds extensive use in the following applications: - Audio amplifiers - Signal amplification circuits - Switching circuits - Oscillator circuits - Voltage regulators

Detailed and Complete Alternative Models

Some alternative models to the MMBT4403WT1G include: - 2N4403 - BC557 - BC327 - 2N3906

In conclusion, the MMBT4403WT1G PNP BJT transistor offers a balance of performance and versatility, making it a popular choice for amplification and switching applications in various electronic circuits.

Word Count: 366

技術ソリューションにおける MMBT4403WT1G の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum collector current of MMBT4403WT1G?

    • The maximum collector current of MMBT4403WT1G is 600mA.

  2. What is the typical hFE (DC current gain) of MMBT4403WT1G?

    • The typical hFE of MMBT4403WT1G is 100-300 at a collector current of 150mA.

  3. What is the maximum power dissipation of MMBT4403WT1G?

    • The maximum power dissipation of MMBT4403WT1G is 350mW.

  4. What are the typical applications for MMBT4403WT1G?

    • MMBT4403WT1G is commonly used in low-power amplification, switching, and general-purpose applications.

  5. What is the voltage rating of MMBT4403WT1G?

    • The voltage rating of MMBT4403WT1G is 40V.

  6. Is MMBT4403WT1G suitable for use in high-frequency applications?

    • Yes, MMBT4403WT1G can be used in high-frequency applications due to its fast switching characteristics.

  7. What is the thermal resistance of MMBT4403WT1G?

    • The thermal resistance of MMBT4403WT1G is typically around 357°C/W.

  8. Can MMBT4403WT1G be used in SMD (Surface Mount Device) applications?

    • Yes, MMBT4403WT1G is designed for SMD applications and is available in various surface mount packages.

  9. Does MMBT4403WT1G require external biasing components?

    • MMBT4403WT1G may require external biasing components depending on the specific application and circuit configuration.

  10. What are the key differences between MMBT4403WT1G and similar transistors?

    • MMBT4403WT1G offers low saturation voltage and high current gain, making it suitable for various low-power applications. Its characteristics may differ from other similar transistors based on specific parameters and performance requirements.