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MMFZ10T3G

MMFZ10T3G

Product Overview

Category: Diode
Use: Voltage regulation and protection
Characteristics: Low forward voltage drop, high surge capability
Package: SOD-123
Essence: Zener diode
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Voltage: 10V
  • Power Dissipation: 1.0W
  • Forward Voltage Drop: 1.2V
  • Reverse Leakage Current: 5μA
  • Operating Temperature Range: -65°C to +150°C

Detailed Pin Configuration

The MMFZ10T3G is a single zener diode with two pins. The cathode is connected to the semiconductor's P-type material, while the anode is connected to the N-type material.

Functional Features

  • Provides stable voltage regulation
  • Protects circuits from overvoltage conditions
  • High surge capability for added reliability

Advantages and Disadvantages

Advantages: - Low forward voltage drop - High surge capability - Precise voltage regulation

Disadvantages: - Limited power dissipation - Sensitivity to temperature variations

Working Principles

The MMFZ10T3G operates based on the principle of the Zener effect, where it maintains a constant voltage across its terminals when reverse-biased.

Detailed Application Field Plans

The MMFZ10T3G is commonly used in: - Voltage regulators - Overvoltage protection circuits - Power supplies

Detailed and Complete Alternative Models

  • BZX84C10
  • 1N4740A
  • MMSZ5240B

This comprehensive entry provides a detailed overview of the MMFZ10T3G, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

技術ソリューションにおける MMFZ10T3G の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is MMFZ10T3G?

    • MMFZ10T3G is a Zener diode with a voltage of 10V and a power dissipation of 500mW.
  2. What are the typical applications of MMFZ10T3G?

    • It is commonly used in voltage regulation, overvoltage protection, and signal clamping applications.
  3. What is the maximum current that MMFZ10T3G can handle?

    • The maximum current for MMFZ10T3G is typically around 100mA.
  4. How does MMFZ10T3G provide overvoltage protection?

    • When the voltage across the diode exceeds its breakdown voltage (10V), it conducts and limits the voltage to 10V, protecting the circuit from overvoltage.
  5. Can MMFZ10T3G be used in reverse bias?

    • Yes, it can be used in reverse bias as a regular diode, but it will conduct significantly when the voltage reaches 10V.
  6. What is the temperature range for MMFZ10T3G?

    • The operating temperature range is typically -65°C to +150°C.
  7. Is MMFZ10T3G suitable for high-frequency applications?

    • Yes, it can be used in high-frequency applications due to its fast response time.
  8. What is the package type for MMFZ10T3G?

    • It is available in a SOD-123 package, which is a small surface-mount package.
  9. Can multiple MMFZ10T3G diodes be connected in series or parallel?

    • Yes, they can be connected in series to increase the breakdown voltage or in parallel to increase the current-handling capability.
  10. Are there any important considerations when using MMFZ10T3G in a circuit?

    • It's important to consider the power dissipation, current limiting resistor, and the voltage requirements of the specific application to ensure proper functionality and protection.