NM27C128Q150

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile Memory
• Characteristics: High-density, low-power, electrically erasable programmable read-only memory (EEPROM)
• Package: 32-pin DIP (Dual In-line Package)
• Essence: Stores and retrieves digital information even when power is turned off
• Packaging/Quantity: Typically sold in trays or tubes containing multiple units

Specifications

• Capacity: 128 kilobits (16 kilobytes)
• Organization: 16,384 words x 8 bits
• Access Time: 150 nanoseconds
• Supply Voltage: 5 volts
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 10 years

Detailed Pin Configuration

1. A14
2. A12
3. A7
4. A6
5. A5
6. A4
7. A3
8. A2
9. A1
10. A0
11. VSS (Ground)
12. Q7
13. Q6
14. Q5
15. Q4
16. Q3
17. Q2
18. Q1
19. Q0
20. CE (Chip Enable)
21. OE (Output Enable)
22. WE (Write Enable)
23. NC (No Connection)
24. VCC (Supply Voltage)
25. A13
26. A8
27. A9
28. A11
29. A10
30. Q8
31. Q9
32. Q10

Functional Features

• Electrically erasable and reprogrammable
• High-density storage capacity
• Low power consumption
• Fast access time
• Reliable data retention
• Easy integration into electronic systems

Advantages

• Non-volatile memory retains data even without power
• Can be electrically erased and reprogrammed multiple times
• Suitable for applications requiring frequent data updates
• Compact size and low power consumption make it ideal for portable devices

Disadvantages

• Limited storage capacity compared to other memory technologies
• Slower access time compared to volatile memory
• Higher cost per bit compared to some alternatives
• Susceptible to radiation-induced errors in certain environments

Working Principles

NM27C128Q150 is based on EEPROM technology, which utilizes floating-gate transistors to store and retrieve digital information. The memory cells can be electrically programmed and erased by applying specific voltage levels to the control pins. When a memory cell is programmed, charge is trapped in the floating gate, representing a logical "1." Erasing the cell removes the charge, resulting in a logical "0." The stored information remains intact even when power is turned off.

Detailed Application Field Plans

• Embedded systems
• Consumer electronics
• Automotive electronics
• Industrial control systems
• Medical devices
• Communication equipment

Detailed and Complete Alternative Models

• NM27C256Q200: 256 kilobit EEPROM with faster access time
• NM27C512Q250: 512 kilobit EEPROM with extended temperature range
• NM27C1024Q300: 1 megabit EEPROM with higher storage capacity
• NM27C2048Q350: 2 megabit EEPROM with lower power consumption

(Note: This list is not exhaustive and there are many other alternative models available in the market.)

This entry provides an overview of NM27C128Q150, a non-volatile memory integrated circuit. It includes basic information such as its category, use, characteristics, package, and essence. The specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models are also discussed.