NTB082N65S3F
Product Overview
Category
The NTB082N65S3F belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic circuits and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Enhanced ruggedness
Package
The NTB082N65S3F is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 80A
- On-Resistance (RDS(on)): 0.082Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 110nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The NTB082N65S3F typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability for power applications
- Low on-resistance for reduced power dissipation
- Fast switching speed for improved efficiency
- Low gate charge for enhanced control
Advantages
- Suitable for high-power applications
- Efficient power management
- Reduced power loss
- Enhanced system reliability
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- May require additional circuitry for optimal performance in some applications
Working Principles
The NTB082N65S3F operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The NTB082N65S3F is widely used in: - Switch-mode power supplies - Motor control systems - Renewable energy systems - Electric vehicle powertrains - Industrial automation equipment
Detailed and Complete Alternative Models
Some alternative models to the NTB082N65S3F include: - IRFP4568PBF - STW75N65M5 - FDPF33N25T
In conclusion, the NTB082N65S3F power MOSFET offers high-performance characteristics suitable for a wide range of high-power switching applications, making it an essential component in modern electronic systems.
[Word Count: 346]
技術ソリューションにおける NTB082N65S3F の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure, here are 10 common questions and answers related to the application of NTB082N65S3F in technical solutions:
Q: What is the maximum drain-source voltage rating of NTB082N65S3F? A: The maximum drain-source voltage rating of NTB082N65S3F is 650V.
Q: What is the continuous drain current rating of NTB082N65S3F? A: The continuous drain current rating of NTB082N65S3F is 82A.
Q: What is the on-resistance of NTB082N65S3F? A: The on-resistance of NTB082N65S3F is typically 0.008 ohms.
Q: Can NTB082N65S3F be used in high-power applications? A: Yes, NTB082N65S3F is suitable for high-power applications due to its high current and voltage ratings.
Q: What type of package does NTB082N65S3F come in? A: NTB082N65S3F comes in a TO-263-3 package.
Q: Is NTB082N65S3F suitable for switching applications? A: Yes, NTB082N65S3F is designed for use in high-speed switching applications.
Q: What is the typical gate charge of NTB082N65S3F? A: The typical gate charge of NTB082N65S3F is 60nC.
Q: Does NTB082N65S3F have built-in protection features? A: NTB082N65S3F has built-in overcurrent protection and thermal shutdown features.
Q: What is the operating temperature range of NTB082N65S3F? A: NTB082N65S3F can operate within a temperature range of -55°C to 175°C.
Q: Can NTB082N65S3F be used in automotive applications? A: Yes, NTB082N65S3F is suitable for use in automotive applications due to its rugged design and high power capabilities.