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NTD3055L170-001
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NTD3055L170-001

Product Overview

The NTD3055L170-001 belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This MOSFET offers high efficiency, low on-resistance, and fast switching characteristics. It is typically packaged in a TO-252 or DPAK package and is available in various quantities per package.

Basic Information

  • Category: Power MOSFET
  • Use: Switching and amplification in electronic circuits
  • Characteristics: High efficiency, low on-resistance, fast switching
  • Package: TO-252 or DPAK
  • Essence: Efficient power management
  • Packaging/Quantity: Available in various quantities per package

Specifications

The NTD3055L170-001 has the following specifications: - Drain-Source Voltage (VDS): 55V - Continuous Drain Current (ID): 42A - On-Resistance (RDS(on)): 17mΩ - Gate-Source Voltage (VGS): ±20V - Total Gate Charge (Qg): 40nC - Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The NTD3055L170-001 features a standard pin configuration with three pins: gate, drain, and source. The pinout is as follows: - Pin 1 (Gate) - Pin 2 (Drain) - Pin 3 (Source)

Functional Features

  • High efficiency in power management applications
  • Low on-resistance for reduced power dissipation
  • Fast switching speed for improved performance

Advantages and Disadvantages

Advantages

  • High efficiency
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The NTD3055L170-001 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET allows current to flow through, enabling its use in switching and amplification applications.

Detailed Application Field Plans

The NTD3055L170-001 finds extensive application in various fields, including: - Power supply units - Motor control systems - LED lighting - Audio amplifiers - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the NTD3055L170-001 include: - IRF3205 - FDP8870 - STP55NF06L - AOD4184

In conclusion, the NTD3055L170-001 power MOSFET offers high efficiency, low on-resistance, and fast switching characteristics, making it suitable for a wide range of electronic applications.

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技術ソリューションにおける NTD3055L170-001 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the NTD3055L170-001?

    • The NTD3055L170-001 is a power MOSFET designed for high current, low voltage applications.

  2. What is the maximum drain-source voltage of the NTD3055L170-001?

    • The maximum drain-source voltage is 170V.

  3. What is the maximum continuous drain current of the NTD3055L170-001?

    • The maximum continuous drain current is 22A.

  4. What are some typical applications for the NTD3055L170-001?

    • It is commonly used in power supplies, motor control, and automotive systems.

  5. What is the on-resistance of the NTD3055L170-001?

    • The on-resistance is typically 0.065 ohms.

  6. What is the gate threshold voltage of the NTD3055L170-001?

    • The gate threshold voltage is typically 2.35V.

  7. Is the NTD3055L170-001 suitable for switching applications?

    • Yes, it is suitable for high-speed switching due to its low on-resistance.

  8. What is the operating temperature range of the NTD3055L170-001?

    • The operating temperature range is -55°C to 175°C.

  9. Does the NTD3055L170-001 require a heat sink for high-power applications?

    • Yes, for high-power applications or high ambient temperatures, a heat sink may be necessary.

  10. Is the NTD3055L170-001 RoHS compliant?

    • Yes, it is RoHS compliant, making it suitable for environmentally friendly designs.