NTD4979N-35G

Product Overview

Use

It is used as a high-voltage, fast-switching N-channel enhancement mode power MOSFET.

Characteristics

High voltage capability
Low gate charge
Fast switching speed
Low on-resistance

Package

The NTD4979N-35G is typically available in a TO-252 (DPAK) package.

Essence

The essence of NTD4979N-35G lies in its ability to efficiently control high voltages and currents in various electronic circuits.

Packaging/Quantity

The NTD4979N-35G is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

Drain-Source Voltage (VDS): 30V
Continuous Drain Current (ID): 120A
RDS(ON) (Max) @ VGS = 10V: 3.5mΩ
Gate-Source Voltage (VGS): ±20V
Total Gate Charge (Qg): 60nC

Detailed Pin Configuration

The NTD4979N-35G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage capability allows for use in various power applications.
Low gate charge enables fast switching, reducing power loss.
Low on-resistance ensures efficient power handling.

Advantages

High voltage capability makes it suitable for diverse applications.
Fast switching speed enhances overall system efficiency.
Low on-resistance minimizes power dissipation.

Disadvantages

May require careful consideration of gate drive circuitry due to high gate charge.
Limited availability of alternative models with similar specifications.

Working Principles

The NTD4979N-35G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The NTD4979N-35G is commonly used in: - Power supplies - Motor control systems - Inverters - DC-DC converters

Detailed and Complete Alternative Models

While the NTD4979N-35G offers unique specifications, alternative models with similar characteristics include: - IRF7749L1TRPBF - FDPF33N25T - AUIRF7739L2TR

In conclusion, the NTD4979N-35G power MOSFET provides high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of power applications.

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技術ソリューションにおける NTD4979N-35G の適用に関連する 10 件の一般的な質問と回答をリストします。

What is the NTD4979N-35G?
- The NTD4979N-35G is a high-voltage, high-current power MOSFET designed for various technical applications.
What are the key specifications of the NTD4979N-35G?
- The NTD4979N-35G features a voltage rating of 350V, a continuous drain current of 120A, and a low on-resistance.
In what technical solutions can the NTD4979N-35G be used?
- The NTD4979N-35G is commonly used in power supplies, motor control, and other high-power applications.
What are the advantages of using the NTD4979N-35G in technical solutions?
- The NTD4979N-35G offers low conduction losses, high switching speed, and robustness in demanding environments.
How does the NTD4979N-35G compare to similar MOSFETs in the market?
- The NTD4979N-35G stands out for its high voltage rating, high current capability, and low on-resistance compared to many other MOSFETs.
Are there any application notes or reference designs available for the NTD4979N-35G?
- Yes, application notes and reference designs are available to assist with the implementation of the NTD4979N-35G in various technical solutions.
What thermal considerations should be taken into account when using the NTD4979N-35G?
- Proper heat sinking and thermal management are important due to the high power dissipation capabilities of the NTD4979N-35G.
Can the NTD4979N-35G be used in automotive applications?
- Yes, the NTD4979N-35G is suitable for automotive applications such as electric vehicle powertrains and battery management systems.
What protection features does the NTD4979N-35G offer?
- The NTD4979N-35G includes built-in protection against overcurrent, overvoltage, and thermal overload conditions.
Where can I find detailed technical documentation for the NTD4979N-35G?
- Detailed datasheets, application notes, and other technical documents for the NTD4979N-35G can be found on the manufacturer's website or through authorized distributors.