ON Semiconductor
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
NTD65N03RT4G
詳細を表示 DataSheets

NTD65N03RT4G - Product Overview and Analysis

Introduction

The NTD65N03RT4G is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Switching and amplification in electronic circuits
  • Characteristics: High current-carrying capability, low on-resistance, fast switching speed
  • Package: DPAK (TO-252)
  • Essence: Efficient power management
  • Packaging/Quantity: Typically available in reels of 2500 units

Specifications

  • Voltage Rating: 30V
  • Current Rating: 65A
  • On-Resistance: 3.5mΩ
  • Gate Charge: 18nC
  • Operating Temperature: -55°C to 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DPAK-3

Detailed Pin Configuration

The NTD65N03RT4G follows the standard pin configuration for a DPAK package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient operation
  • High current-carrying capability for robust performance

Advantages and Disadvantages

Advantages

  • High efficiency in power management
  • Suitable for high-current applications
  • Fast response time

Disadvantages

  • Sensitive to overvoltage conditions
  • Requires careful handling during installation

Working Principles

The NTD65N03RT4G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET finds extensive use in various applications, including: - Switching power supplies - Motor control circuits - LED lighting systems - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the NTD65N03RT4G include: - IRF3709ZPBF - FDP8878 - AON6512

In conclusion, the NTD65N03RT4G power MOSFET offers high-performance characteristics and is suitable for a wide range of electronic applications, making it a versatile component in modern circuit design.

[Word Count: 320]

技術ソリューションにおける NTD65N03RT4G の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage for NTD65N03RT4G?

    • The maximum drain-source voltage for NTD65N03RT4G is 30V.

  2. What is the continuous drain current rating for NTD65N03RT4G?

    • The continuous drain current rating for NTD65N03RT4G is 65A.

  3. What is the on-resistance (RDS(on)) of NTD65N03RT4G?

    • The on-resistance (RDS(on)) of NTD65N03RT4G is typically 6.5mΩ at VGS = 10V.

  4. What is the gate threshold voltage for NTD65N03RT4G?

    • The gate threshold voltage for NTD65N03RT4G is typically 2.5V.

  5. What is the power dissipation of NTD65N03RT4G?

    • The power dissipation of NTD65N03RT4G is 75W.

  6. What are the typical applications for NTD65N03RT4G?

    • NTD65N03RT4G is commonly used in power management, motor control, and load switching applications.

  7. What is the operating temperature range for NTD65N03RT4G?

    • The operating temperature range for NTD65N03RT4G is -55°C to 175°C.

  8. Does NTD65N03RT4G have built-in protection features?

    • Yes, NTD65N03RT4G has built-in overcurrent protection and thermal shutdown features.

  9. Is NTD65N03RT4G suitable for automotive applications?

    • Yes, NTD65N03RT4G is suitable for automotive applications due to its high current handling capability and robust design.

  10. What are the package options available for NTD65N03RT4G?

    • NTD65N03RT4G is available in a D2PAK package, which provides good thermal performance and high reliability.