NTLJS3113PT1G
Product Overview
Category
The NTLJS3113PT1G belongs to the category of semiconductor devices.
Use
It is used as a power MOSFET for various electronic applications.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
Package
The NTLJS3113PT1G is typically available in a TO-252 package.
Essence
This product is essential for power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels with a quantity of 2500 units per reel.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 10A
- On-State Resistance (RDS(on)): 13mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Power Dissipation (PD): 2.5W
Detailed Pin Configuration
The NTLJS3113PT1G has three pins: Drain, Source, and Gate. The pin configuration is as follows: - Pin 1 (Drain) - Pin 2 (Source) - Pin 3 (Gate)
Functional Features
- High current handling capacity
- Low power dissipation
- Enhanced thermal performance
Advantages
- Efficient power management
- Reduced heat generation
- Improved system reliability
Disadvantages
- Sensitive to static electricity
- Requires careful handling during installation
Working Principles
The NTLJS3113PT1G operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This product is widely used in various applications such as: - Switching power supplies - Motor control - LED lighting - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to NTLJS3113PT1G include: - IRF3205 - FDP8878 - NDP6020P
In conclusion, the NTLJS3113PT1G is a versatile power MOSFET with high current handling capabilities and fast switching speeds. Its use spans across various electronic applications, making it an essential component in modern electronic systems.
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技術ソリューションにおける NTLJS3113PT1G の適用に関連する 10 件の一般的な質問と回答をリストします。
What is NTLJS3113PT1G?
- NTLJS3113PT1G is a specific model of semiconductor diode used in various technical solutions.
What are the key specifications of NTLJS3113PT1G?
- The key specifications of NTLJS3113PT1G include its forward voltage, reverse current, and maximum power dissipation.
In what applications is NTLJS3113PT1G commonly used?
- NTLJS3113PT1G is commonly used in power management, voltage regulation, and rectification circuits in electronic devices.
What is the typical operating temperature range for NTLJS3113PT1G?
- The typical operating temperature range for NTLJS3113PT1G is between -55°C to 150°C.
How does NTLJS3113PT1G compare to other similar diodes in terms of performance?
- NTLJS3113PT1G offers comparable performance to other diodes in its class, with specific advantages in certain operating conditions.
What are the recommended storage conditions for NTLJS3113PT1G?
- It is recommended to store NTLJS3113PT1G in a dry environment at temperatures below 40°C.
Can NTLJS3113PT1G be used in high-frequency applications?
- NTLJS3113PT1G is suitable for use in moderate to high-frequency applications, but its performance may vary based on specific circuit requirements.
Are there any known reliability issues with NTLJS3113PT1G?
- NTLJS3113PT1G has a proven track record of reliability, but proper application and adherence to manufacturer guidelines are essential for optimal performance.
What are the common failure modes associated with NTLJS3113PT1G?
- Common failure modes for NTLJS3113PT1G include thermal overstress, reverse voltage breakdown, and mechanical damage during handling or assembly.
Where can I find detailed technical documentation for NTLJS3113PT1G?
- Detailed technical documentation for NTLJS3113PT1G can be obtained from the manufacturer's website or through authorized distributors.