NTMFD4952NFT3G

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electrical signals in power electronics applications - Characteristics: High current-carrying capability, low on-state resistance, fast switching speed - Package: Surface-mount package (e.g., DFN) - Essence: Enhancing power efficiency and performance in electronic circuits - Packaging/Quantity: Typically available in reels of 3000 units

Specifications: - Voltage Rating: 100V - Current Rating: 120A - On-State Resistance: 4.5mΩ - Gate Threshold Voltage: 2.5V - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected (NC)

Functional Features: - High current-handling capability - Low on-state resistance for reduced power dissipation - Fast switching speed for improved efficiency - Enhanced ruggedness for reliability in harsh environments

Advantages: - Improved power efficiency - Reduced heat generation - Enhanced system reliability - Suitable for high-frequency applications

Disadvantages: - Higher cost compared to traditional MOSFETs - Sensitive to electrostatic discharge (ESD) due to smaller package size

Working Principles: The NTMFD4952NFT3G operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of a channel.

Detailed Application Field Plans: - Switched-mode power supplies - Motor control - Class D audio amplifiers - LED lighting - Solar inverters

Detailed and Complete Alternative Models: - Infineon IPP120N10N3 G - Vishay SiHP120N60E-GE3

This comprehensive entry provides an in-depth understanding of the NTMFD4952NFT3G, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.