画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
NTMFS4925NT3G
Product Overview
- Category: Power MOSFET
- Use: Switching and amplifying electronic signals in power applications
- Characteristics: High efficiency, low on-resistance, fast switching speed
- Package: DFN (Dual Flat No-Lead)
- Essence: Advanced power management solution
- Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications
- Voltage - Drain-Source Breakdown (Vds): 30V
- Current - Continuous Drain (Id) @ 25°C: 120A
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) @ Vgs: 38nC @ 10V
Detailed Pin Configuration
The NTMFS4925NT3G features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).
Functional Features
- High Efficiency: Minimizes power loss and heat generation
- Fast Switching Speed: Enables rapid response in power control applications
- Low On-Resistance: Reduces conduction losses and improves overall system efficiency
Advantages and Disadvantages
Advantages
- High efficiency
- Low on-resistance
- Fast switching speed
Disadvantages
- Sensitive to voltage spikes
- Requires careful handling during installation
Working Principles
The NTMFS4925NT3G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel.
Detailed Application Field Plans
This power MOSFET is suitable for a wide range of applications including:
- DC-DC converters
- Motor control
- Power supplies
- Battery management systems
- LED lighting
Detailed and Complete Alternative Models
- NTMFS4C05N: Similar characteristics and package type
- NTMFS4C06N: Higher voltage rating with comparable performance
- NTMFS4C10N: Lower on-resistance for higher efficiency
In conclusion, the NTMFS4925NT3G is a high-performance power MOSFET designed for efficient power management in various electronic applications.
Word count: 366