NTMS4802NR2G

Product Overview

• Category: Power MOSFET
• Use: Switching applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: TO-261-3 (D2PAK)
• Essence: Power management
• Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

• Voltage - Drain-Source Breakdown (V(BR)DSS): 30V
• Current - Continuous Drain (Id) @ 25°C: 120A
• Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 60A, 10V
• Input Capacitance (Ciss) @ Vds: 6500pF @ 15V
• Power Dissipation (Max): 200W

Detailed Pin Configuration

1. Gate
2. Drain
3. Source

Functional Features

• Low gate charge
• Enhanced power dissipation capability
• Avalanche energy specified

Advantages and Disadvantages

Advantages

• High efficiency
• Fast switching speed
• Low on-resistance

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The NTMS4802NR2G is a power MOSFET designed for efficient switching applications. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. This allows for precise control of power in various electronic circuits.

Detailed Application Field Plans

The NTMS4802NR2G is commonly used in: - DC-DC converters - Motor control systems - Power supplies - Battery management systems

Detailed and Complete Alternative Models

• IRF4905PBF
• FDP8878
• SI7850DP-T1-GE3

This completes the entry for NTMS4802NR2G, providing comprehensive information about its product details, specifications, features, and application fields.

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