BD50GA3WNUX-TR

Product Overview

Category: Electronic Component
Use: Power Amplifier
Characteristics: High power output, low distortion
Package: TO-220
Essence: Transistor
Packaging/Quantity: Tape and Reel, 1000 units per reel

Specifications

• Maximum Power Dissipation: 50 Watts
• Collector-Emitter Voltage: 30 Volts
• Collector Current: 5 Amperes
• DC Current Gain: 40 to 250
• Transition Frequency: 150 MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The BD50GA3WNUX-TR transistor has three pins:

1. Base (B): Used to control the flow of current through the transistor.
2. Collector (C): Collects the current flowing through the transistor.
3. Emitter (E): Emits the current flowing through the transistor.

Functional Features

• High power output: The BD50GA3WNUX-TR offers a maximum power dissipation of 50 Watts, making it suitable for applications requiring high power amplification.
• Low distortion: This transistor ensures minimal distortion in the amplified signal, resulting in high-quality audio or RF signals.
• Wide operating temperature range: With an operating temperature range of -55°C to +150°C, the BD50GA3WNUX-TR can withstand extreme environmental conditions.

Advantages and Disadvantages

Advantages: - High power output capability - Low distortion for improved signal quality - Wide operating temperature range

Disadvantages: - Limited voltage and current ratings compared to some other power amplifier transistors - Higher cost compared to lower-power alternatives

Working Principles

The BD50GA3WNUX-TR is a bipolar junction transistor (BJT) that operates based on the principles of amplification and control of current. When a small current is applied to the base pin, it controls the larger current flowing between the collector and emitter pins. This allows the transistor to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The BD50GA3WNUX-TR transistor finds applications in various fields, including:

1. Audio Amplification: It can be used in audio systems to amplify low-level audio signals to higher power levels for speakers.
2. RF Amplification: The transistor is suitable for radio frequency (RF) amplification in communication systems, ensuring efficient signal transmission.
3. Power Supplies: It can be utilized in power supply circuits to regulate and amplify voltage levels for different electronic devices.
4. Motor Control: The BD50GA3WNUX-TR can be employed in motor control circuits to regulate the speed and direction of motors.

Detailed and Complete Alternative Models

1. BD50GB3WNUX-TR: Similar to BD50GA3WNUX-TR, but with higher collector-emitter voltage rating (40 Volts).
2. BD50GC3WNUX-TR: Similar to BD50GA3WNUX-TR, but with higher collector current rating (8 Amperes).
3. BD100GA3WNUX-TR: A higher-power alternative with double the maximum power dissipation (100 Watts).

These alternative models offer similar functionality and characteristics, allowing users to choose the most suitable option based on their specific requirements.

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