MMST8098T146

Product Overview

• Belongs to: Semiconductor Devices
• Category: Transistor
• Use: Amplification and switching of electronic signals
• Characteristics: High voltage capability, high current capability, low power dissipation
• Package: TO-220AB
• Essence: NPN Silicon Epitaxial Planar Transistor
• Packaging/Quantity: Bulk packaging, 100 pieces per pack

Specifications

• Collector-Emitter Voltage (VCEO): 700V
• Collector-Base Voltage (VCBO): 800V
• Emitter-Base Voltage (VEBO): 9V
• Collector Current (IC): 8A
• Power Dissipation (PD): 40W
• Operating and Storage Junction Temperature Range: -55°C to +150°C

Detailed Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High voltage capability allows for use in various applications
• High current capability enables efficient signal amplification
• Low power dissipation reduces heat generation and energy consumption

Advantages

• Suitable for high voltage applications
• Capable of handling high currents
• Low power dissipation leads to improved efficiency

Disadvantages

• May require additional heat sinking in high-power applications
• Sensitive to overvoltage conditions

Working Principles

The MMST8098T146 operates as a bipolar junction transistor (BJT), where the flow of charge carriers is controlled by the application of a small current at the base terminal. This controls the larger current flowing between the collector and emitter terminals, allowing for signal amplification or switching.

Detailed Application Field Plans

• Power supply circuits
• Audio amplifiers
• Switching circuits

Detailed and Complete Alternative Models

• MMST4401T146
• MMST5551T146
• MMST2907AT146
• MMST2222AT146

This completes the entry for MMST8098T146, providing comprehensive information on its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.