RXH125N03TB1

Product Overview

• Category: Power Transistor
• Use: Amplification and switching of electrical signals
• Characteristics: High power handling, low on-resistance, fast switching speed
• Package: TO-220AB
• Essence: N-channel MOSFET
• Packaging/Quantity: 50 pieces per tube

Specifications

• Voltage Rating: 30V
• Current Rating: 125A
• On-Resistance: 3mΩ
• Gate Threshold Voltage: 2V
• Power Dissipation: 300W

Detailed Pin Configuration

• Pin 1 (Gate): Input for controlling the flow of current
• Pin 2 (Drain): Output terminal for the current
• Pin 3 (Source): Connection to ground

Functional Features

• High current-carrying capability
• Low on-resistance for minimal power loss
• Fast switching speed for efficient operation

Advantages and Disadvantages

• Advantages:
  • High power handling capacity
  • Low on-resistance leads to reduced heat dissipation
  • Fast switching speed enhances efficiency
• Disadvantages:
  • Susceptible to voltage spikes
  • Gate capacitance can affect high-frequency performance

Working Principles

The RXH125N03TB1 operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power transistor is suitable for various applications including: - Motor control systems - Power supplies - Audio amplifiers - LED lighting systems

Detailed and Complete Alternative Models

• Alternative Model 1: RXH100N02TB1
  • Voltage Rating: 20V
  • Current Rating: 100A
  • On-Resistance: 2mΩ
• Alternative Model 2: RXH150N04TB1
  • Voltage Rating: 40V
  • Current Rating: 150A
  • On-Resistance: 4mΩ

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This comprehensive entry provides detailed information about the RXH125N03TB1 power transistor, covering its specifications, features, advantages, and application fields.