M95512-DRDW3TP/K

Product Overview

Category

M95512-DRDW3TP/K belongs to the category of EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This product is commonly used for storing and retrieving small amounts of data in electronic devices. It provides non-volatile memory storage, allowing data to be retained even when power is removed.

Characteristics

• Non-volatile memory: Data remains intact even without power.
• Electrically erasable and programmable: Allows for easy modification of stored data.
• Small form factor: Compact size suitable for integration into various electronic devices.
• High endurance: Can withstand a large number of read/write cycles.
• Low power consumption: Efficient energy usage for extended battery life.

Package

The M95512-DRDW3TP/K comes in a standard 8-pin Dual Flat No-Lead (DFN) package.

Essence

The essence of this product lies in its ability to provide reliable and flexible non-volatile memory storage for electronic devices.

Packaging/Quantity

The M95512-DRDW3TP/K is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory capacity: 512 kilobits (64 kilobytes)
• Interface: Serial I2C (Inter-Integrated Circuit)
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Write endurance: 4 million write cycles
• Data retention: 200 years

Detailed Pin Configuration

The M95512-DRDW3TP/K has the following pin configuration:

1. VSS: Ground
2. SDA: Serial Data Input/Output
3. SCL: Serial Clock Input
4. WP: Write Protect
5. VCC: Power Supply
6. NC: No Connection
7. NC: No Connection
8. VSS: Ground

Functional Features

• Random access: Allows for reading and writing data at any memory location.
• Byte-level erasability: Enables modification of individual bytes without affecting others.
• Hardware write protection: The WP pin can be used to protect the memory from accidental writes.
• Software write protection: Additional software commands can be used to enable or disable write protection.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Easy to integrate into various electronic devices due to its small form factor.
• High endurance allows for frequent read/write operations.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Slower write speeds compared to volatile memory types.
• Relatively higher cost per unit compared to some alternative memory solutions.

Working Principles

The M95512-DRDW3TP/K utilizes electrically controlled floating gate transistors to store and retrieve data. When data is written, an electrical charge is applied to the floating gate, altering its conductivity. This change in conductivity represents the stored data. During read operations, the conductivity of the floating gate is measured to determine the stored information.

Detailed Application Field Plans

The M95512-DRDW3TP/K finds applications in various electronic devices, including but not limited to: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., engine control units, infotainment systems) - Industrial equipment (e.g., programmable logic controllers, sensors) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

Some alternative models to the M95512-DRDW3TP/K include: - M95010-DRDW6TP/K: 1 kilobit EEPROM with similar specifications. - M95128-DRDW6TP/K: 128 kilobit EEPROM with higher storage capacity. - M95320-DRDW6TP/K: 32 kilobyte EEPROM with extended temperature range.

These alternative models offer different memory capacities and features to suit specific application requirements.

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