The STB21N65M5 is a power MOSFET belonging to the category of semiconductor devices. It is commonly used in various electronic applications due to its unique characteristics and performance.
The STB21N65M5 follows the standard pin configuration for a TO-220 package: 1. Source (S) 2. Gate (G) 3. Drain (D)
The STB21N65M5 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device. When a sufficient gate voltage is applied, the MOSFET allows current to flow between the drain and source terminals.
The STB21N65M5 finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - Inverters and converters - Electronic ballasts - LED lighting systems
For applications requiring similar specifications and performance, alternative models to the STB21N65M5 include: - IRF840 - FDPF33N25 - IXFN38N100
In conclusion, the STB21N65M5 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power management applications.
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What is the maximum drain-source voltage rating of STB21N65M5?
What is the continuous drain current rating of STB21N65M5?
What is the on-state resistance (RDS(on)) of STB21N65M5?
What is the gate threshold voltage of STB21N65M5?
What are the typical applications for STB21N65M5?
What is the operating temperature range of STB21N65M5?
Does STB21N65M5 have built-in protection features?
Can STB21N65M5 be used in automotive applications?
What package type is STB21N65M5 available in?
Is STB21N65M5 RoHS compliant?