STF19NM65N

Introduction

STF19NM65N is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

Category: Power MOSFET
Use: Power switching applications
Characteristics: High voltage capability, low input capacitance, fast switching speed
Package: TO-220FP
Essence: Efficient power management
Packaging/Quantity: Typically packaged in reels of 250 units

Specifications

Voltage Rating: 650V
Current Rating: 19A
RDS(ON): 0.19Ω
Gate Charge (Qg): 23nC
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STF19NM65N follows the standard pin configuration for a TO-220FP package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

Low input capacitance for fast switching
High voltage capability for power applications
Low RDS(ON) for reduced conduction losses
Enhanced avalanche ruggedness for reliability

Advantages and Disadvantages

Advantages

Fast switching speed
Low power dissipation
High voltage capability

Disadvantages

Higher cost compared to standard MOSFETs
Sensitive to static electricity

Working Principles

STF19NM65N operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the conductivity between the source and drain terminals. When the gate-source voltage exceeds the threshold, the MOSFET enters the ON state, allowing current to flow through.

Detailed Application Field Plans

STF19NM65N finds extensive use in the following application fields: - Switched-mode power supplies - Motor control - Inverters - LED lighting - Solar inverters

Detailed and Complete Alternative Models

Some alternative models to STF19NM65N include: - IRF840 - FDP8870 - IXFN38N100

In conclusion, STF19NM65N is a high-performance power MOSFET with versatile applications in power electronics and related fields.

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