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STP18N60M2
Introduction
The STP18N60M2 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and functional features.
Basic Information Overview
- Category: Power MOSFET
- Use: The STP18N60M2 is used as a switching device in power supply, motor control, and lighting applications.
- Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
- Package: The STP18N60M2 is available in a TO-220 package, which provides easy mounting and thermal dissipation.
- Essence: Its essence lies in providing efficient power switching capabilities in various electronic circuits.
- Packaging/Quantity: Typically packaged in reels or tubes, the quantity per package varies based on manufacturer specifications.
Specifications
- Voltage Rating: 600V
- Current Rating: 18A
- On-State Resistance: 0.29Ω
- Gate-Source Voltage (Max): ±20V
- Power Dissipation: 250W
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STP18N60M2 follows the standard pin configuration for a TO-220 package:
1. Source (S)
2. Gate (G)
3. Drain (D)
Functional Features
- Low On-State Resistance: Enables efficient power transfer with minimal voltage drop.
- High Switching Speed: Facilitates rapid switching operations, reducing power loss.
- Low Gate Charge: Allows for quick and precise control of the MOSFET.
Advantages and Disadvantages
Advantages
- High efficiency in power conversion applications
- Fast switching speed
- Low power dissipation
Disadvantages
- Sensitive to voltage spikes
- Requires careful consideration of gate driving circuitry
Working Principles
The STP18N60M2 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high-power loads.
Detailed Application Field Plans
The STP18N60M2 finds extensive use in the following applications:
- Switched-mode power supplies
- Motor control systems
- Lighting ballasts
- Audio amplifiers
- Inverters
Detailed and Complete Alternative Models
- IRFP460: Similar voltage and current ratings
- FDPF18N50T: Comparable characteristics and package type
- IXFN18N100Q2: Higher voltage rating and current capacity
In conclusion, the STP18N60M2 power MOSFET offers high performance and reliability in various power electronics applications, making it a preferred choice for designers seeking efficient power switching solutions.
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技術ソリューションにおける STP18N60M2 の適用に関連する 10 件の一般的な質問と回答をリストします。
What is the maximum drain-source voltage of STP18N60M2?
- The maximum drain-source voltage of STP18N60M2 is 600V.
What is the continuous drain current rating of STP18N60M2?
- The continuous drain current rating of STP18N60M2 is 18A.
What is the on-state resistance (RDS(on)) of STP18N60M2?
- The on-state resistance (RDS(on)) of STP18N60M2 is typically 0.23 ohms.
What is the gate threshold voltage of STP18N60M2?
- The gate threshold voltage of STP18N60M2 is typically 3V.
What are the typical applications for STP18N60M2?
- STP18N60M2 is commonly used in power supplies, motor control, and lighting applications.
What is the operating temperature range of STP18N60M2?
- The operating temperature range of STP18N60M2 is -55°C to 150°C.
Is STP18N60M2 suitable for high-frequency switching applications?
- Yes, STP18N60M2 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.
Does STP18N60M2 require a heat sink for operation?
- Depending on the application and power dissipation, a heat sink may be required for optimal thermal performance.
Can STP18N60M2 be used in parallel to increase current handling capability?
- Yes, STP18N60M2 can be used in parallel to increase current handling capability in high-power applications.
What are the key advantages of using STP18N60M2 in technical solutions?
- The key advantages of using STP18N60M2 include low on-state resistance, high voltage capability, and suitability for various power electronics applications.