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1N5819-E3/73

1N5819-E3/73

Product Overview

Category

The 1N5819-E3/73 belongs to the category of Schottky diodes.

Use

It is commonly used in rectification and voltage clamping applications.

Characteristics

  • Low forward voltage drop
  • High current capability
  • Fast switching speed
  • Low reverse leakage

Package

The 1N5819-E3/73 is available in a DO-41 package.

Essence

This diode is essential for preventing reverse current flow and providing efficient voltage regulation.

Packaging/Quantity

It is typically packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Forward Voltage Drop: 0.45V at 1A
  • Reverse Voltage: 40V
  • Forward Current: 1A
  • Maximum Operating Temperature: 125°C

Detailed Pin Configuration

The 1N5819-E3/73 has two pins, anode and cathode, with the anode being connected to the positive side of the circuit and the cathode to the negative side.

Functional Features

  • Efficient rectification of AC to DC
  • Low power loss
  • Fast response time

Advantages

  • Low forward voltage drop reduces power dissipation
  • Fast switching speed allows for high-frequency operation
  • High current capability enables use in various applications

Disadvantages

  • Limited reverse voltage rating compared to other diodes
  • Sensitive to overvoltage conditions

Working Principles

The 1N5819-E3/73 operates based on the Schottky barrier principle, where the metal-semiconductor junction provides low forward voltage drop and fast switching characteristics.

Detailed Application Field Plans

  • Power supplies
  • Voltage clamping circuits
  • Solar panel bypass diodes
  • Switching power converters

Detailed and Complete Alternative Models

  • 1N5817: Lower forward voltage drop
  • 1N5818: Higher reverse voltage rating
  • SS14: Surface mount alternative

In conclusion, the 1N5819-E3/73 Schottky diode offers efficient rectification and voltage clamping capabilities with its low forward voltage drop and high current capability. While it has limitations in terms of reverse voltage rating, it finds extensive use in various applications such as power supplies, voltage clamping circuits, and solar panel bypass diodes. Additionally, alternative models like the 1N5817 and 1N5818 provide options for specific performance requirements.

技術ソリューションにおける 1N5819-E3/73 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum forward voltage drop of 1N5819-E3/73?

    • The maximum forward voltage drop of 1N5819-E3/73 is typically 0.45V at a forward current of 1A.
  2. What is the maximum reverse voltage rating of 1N5819-E3/73?

    • The maximum reverse voltage rating of 1N5819-E3/73 is 40V.
  3. What is the typical forward current rating of 1N5819-E3/73?

    • The typical forward current rating of 1N5819-E3/73 is 1A.
  4. Can 1N5819-E3/73 be used in high-frequency applications?

    • Yes, 1N5819-E3/73 can be used in high-frequency applications due to its fast switching characteristics.
  5. Is 1N5819-E3/73 suitable for use in power supply rectification?

    • Yes, 1N5819-E3/73 is commonly used for power supply rectification due to its low forward voltage drop and fast recovery time.
  6. What is the operating temperature range of 1N5819-E3/73?

    • The operating temperature range of 1N5819-E3/73 is typically -65°C to +125°C.
  7. Does 1N5819-E3/73 require a heatsink for certain applications?

    • For high current applications, a heatsink may be required to dissipate heat effectively.
  8. Can 1N5819-E3/73 be used in automotive electronics applications?

    • Yes, 1N5819-E3/73 is suitable for use in automotive electronics due to its rugged construction and reliability.
  9. What is the typical reverse recovery time of 1N5819-E3/73?

    • The typical reverse recovery time of 1N5819-E3/73 is 50ns.
  10. Are there any common failure modes associated with 1N5819-E3/73?

    • Common failure modes include thermal runaway under high current conditions and potential damage from reverse voltage spikes. Proper circuit protection should be implemented to mitigate these risks.