BYG23MHE3_A/H

Product Overview

BYG23MHE3A/H belongs to the category of high-frequency, low-loss Schottky diodes. These diodes are commonly used in RF and microwave applications due to their fast switching speed and low forward voltage drop. The characteristics of BYG23MHE3A/H include high frequency operation, low capacitance, and low reverse leakage current. The package type for this diode is SOD-323, and it is available in tape and reel packaging with a quantity of 3000 units per reel.

Specifications

• Forward Voltage: 0.36V
• Reverse Voltage: 30V
• Forward Current: 100mA
• Capacitance: 0.6pF
• Package Type: SOD-323
• Packaging: Tape and Reel
• Quantity: 3000 units per reel

Detailed Pin Configuration

The BYG23MHE3_A/H diode has a standard SOD-323 package with two pins. Pin 1 is the anode (A) and pin 2 is the cathode (K).

Functional Features

• Fast Switching Speed: Enables rapid signal processing in high-frequency applications.
• Low Forward Voltage Drop: Minimizes power loss and heat generation.
• Low Capacitance: Allows for efficient high-frequency operation.

Advantages and Disadvantages

Advantages

• High-frequency Operation: Suitable for RF and microwave circuits.
• Low Forward Voltage: Reduces power dissipation.
• Compact Package: SOD-323 package saves board space.

Disadvantages

• Limited Reverse Voltage: Not suitable for high-voltage applications.
• Sensitivity to Overvoltage: Requires careful handling to prevent damage.

Working Principles

BYG23MHE3_A/H operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for fast switching between conducting and non-conducting states. This enables the diode to efficiently rectify and switch high-frequency signals.

Detailed Application Field Plans

BYG23MHE3_A/H is widely used in RF mixers, detectors, and multipliers, as well as in microwave signal detection and modulation circuits. Its low capacitance and fast switching speed make it suitable for high-frequency communication systems, radar systems, and satellite communication equipment.

Detailed and Complete Alternative Models

• BAT54C: A similar SMD Schottky diode with comparable specifications.
• HSMS-286x: Another high-frequency Schottky diode option for RF and microwave applications.

In conclusion, BYG23MHE3_A/H is a high-frequency, low-loss Schottky diode with fast switching speed and low forward voltage drop, making it ideal for various RF and microwave applications.

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