BZT52C13-HE3-18
Introduction
The BZT52C13-HE3-18 is a semiconductor product belonging to the category of Zener diodes. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Basic Information Overview
- Category: Zener Diode
- Use: Voltage regulation and protection in electronic circuits
- Characteristics: Low leakage current, precise voltage regulation, small package size
- Package: SOD-323 (SC-76), SMD/SMT
- Essence: Semiconductor device for voltage regulation
- Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications
- Voltage - Zener (Nom) (Vz): 13V
- Power Dissipation (Pd): 225mW
- Operating Temperature: -65°C ~ 150°C
- Zener Current (Izt): 5mA
- Voltage Tolerance: ±5%
- Reverse Leakage Current (Ir): 100nA
Detailed Pin Configuration
The BZT52C13-HE3-18 Zener diode has a standard SOD-323 (SC-76) surface mount package with two pins. The cathode is connected to the marked side of the package.
Functional Features
- Precise voltage regulation at 13V
- Low reverse leakage current
- Small form factor for space-constrained applications
Advantages and Disadvantages
Advantages
- Accurate voltage regulation
- Compact package size
- Low leakage current
Disadvantages
- Limited power dissipation capability
- Sensitivity to temperature variations
Working Principles
The BZT52C13-HE3-18 operates based on the principle of the Zener effect, where it maintains a constant voltage across its terminals when it is operated in the reverse breakdown region.
Detailed Application Field Plans
The BZT52C13-HE3-18 is commonly used in various electronic circuits such as: - Voltage regulators - Overvoltage protection circuits - Signal clamping circuits
Detailed and Complete Alternative Models
Some alternative models to the BZT52C13-HE3-18 include: - BZX84C13LT1G - MMSZ5245BT1G - MM3Z13VT1G - PZM13NB2A
In conclusion, the BZT52C13-HE3-18 Zener diode is a crucial component in electronic circuits requiring precise voltage regulation and overvoltage protection. Its compact size and low leakage current make it suitable for various applications in the electronics industry.
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技術ソリューションにおける BZT52C13-HE3-18 の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure, here are 10 common questions and answers related to the application of BZT52C13-HE3-18 in technical solutions:
What is the maximum power dissipation of BZT52C13-HE3-18?
- The maximum power dissipation is 300mW.
What is the forward voltage drop of BZT52C13-HE3-18?
- The forward voltage drop is typically 0.9V at 10mA.
What is the reverse standoff voltage of BZT52C13-HE3-18?
- The reverse standoff voltage is 13V.
Can BZT52C13-HE3-18 be used for overvoltage protection?
- Yes, it can be used for overvoltage protection due to its Zener diode characteristics.
What is the temperature coefficient of BZT52C13-HE3-18?
- The temperature coefficient is approximately 5mV/°C.
Is BZT52C13-HE3-18 suitable for voltage regulation in low-power applications?
- Yes, it is suitable for voltage regulation in low-power applications due to its Zener diode properties.
What is the typical junction capacitance of BZT52C13-HE3-18?
- The typical junction capacitance is 40pF.
Can BZT52C13-HE3-18 be used in battery charging circuits?
- Yes, it can be used in battery charging circuits to protect against overvoltage conditions.
What is the maximum reverse leakage current of BZT52C13-HE3-18?
- The maximum reverse leakage current is 100nA at the standoff voltage.
Is BZT52C13-HE3-18 suitable for ESD protection in electronic circuits?
- Yes, it can be used for ESD protection in electronic circuits due to its fast response time and low clamping voltage.
I hope these questions and answers help you understand the application of BZT52C13-HE3-18 in technical solutions. Let me know if you need further assistance!