EGL41GHE3_A/I is a semiconductor diode belonging to the category of Schottky diodes. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
The EGL41GHE3_A/I has two pins: 1. Anode (A) 2. Cathode (K)
The EGL41GHE3_A/I operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to conventional PN-junction diodes.
The EGL41GHE3_A/I is suitable for various applications including: - Switching Power Supplies - Voltage Clamping Circuits - RF Detectors - Reverse Polarity Protection
Some alternative models to EGL41GHE3_A/I include: - 1N5817: Similar characteristics, different package (DO-41) - SS14: Lower forward voltage drop, higher reverse voltage rating
In conclusion, the EGL41GHE3_A/I is a versatile semiconductor diode with fast switching speed and low forward voltage drop, making it suitable for various high-frequency rectification and power supply applications.
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