Vishay Semiconductor Diodes Division
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SS1H10HE3_B/H
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SS1H10HE3_B/H

Product Overview

Category: Semiconductor
Use: Rectifier diode
Characteristics: High efficiency, low forward voltage drop
Package: SOD-123
Essence: Fast switching
Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast recovery =< 500ns, > 200mA (Io)
  • Operating Temperature: -65°C ~ 175°C

Detailed Pin Configuration

The SS1H10HE3_B/H is a SOD-123 package with two pins. Pin 1 is the anode and pin 2 is the cathode.

Functional Features

  • High efficiency
  • Low forward voltage drop
  • Fast recovery time
  • Low leakage current

Advantages

  • Suitable for high frequency applications
  • Compact SOD-123 package
  • Wide operating temperature range

Disadvantages

  • Lower maximum reverse voltage compared to some alternatives
  • Relatively low average rectified current

Working Principles

The SS1H10HE3_B/H operates as a rectifier diode, allowing current to flow in one direction while blocking it in the opposite direction. Its fast recovery time and low forward voltage drop make it suitable for high-efficiency applications.

Detailed Application Field Plans

The SS1H10HE3_B/H is commonly used in power supplies, LED lighting, and other applications requiring fast switching and high efficiency. It is particularly well-suited for compact designs where space is limited.

Detailed and Complete Alternative Models

  • SS1H9HE3_B/H: Similar characteristics but lower maximum reverse voltage
  • SS1H11HE3_B/H: Higher maximum reverse voltage and average rectified current

This information provides a comprehensive overview of the SS1H10HE3_B/H rectifier diode, including its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.

技術ソリューションにおける SS1H10HE3_B/H の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is SS1H10HE3_B/H?

    • SS1H10HE3_B/H is a high-speed switching diode designed for use in high-frequency applications such as RF and microwave circuits.

  2. What are the key features of SS1H10HE3_B/H?

    • The key features of SS1H10HE3_B/H include low capacitance, fast switching speed, and high reliability, making it suitable for high-frequency applications.

  3. What are the typical applications of SS1H10HE3_B/H?

    • Typical applications of SS1H10HE3_B/H include mixers, detectors, modulators, and other high-frequency circuits in communication systems.

  4. What is the maximum forward voltage of SS1H10HE3_B/H?

    • The maximum forward voltage of SS1H10HE3_B/H is typically around 1V at a forward current of 100mA.

  5. What is the reverse recovery time of SS1H10HE3_B/H?

    • The reverse recovery time of SS1H10HE3_B/H is typically in the range of nanoseconds, making it suitable for high-speed switching applications.

  6. Does SS1H10HE3_B/H have a low leakage current?

    • Yes, SS1H10HE3_B/H is designed to have a low leakage current, which is important for maintaining signal integrity in high-frequency circuits.

  7. Can SS1H10HE3_B/H be used in temperature-sensitive applications?

    • Yes, SS1H10HE3_B/H has a wide operating temperature range and can be used in temperature-sensitive applications within its specified limits.

  8. Is SS1H10HE3_B/H RoHS compliant?

    • Yes, SS1H10HE3_B/H is RoHS compliant, meaning it meets the requirements of the Restriction of Hazardous Substances directive.

  9. What is the package type of SS1H10HE3_B/H?

    • SS1H10HE3_B/H is typically available in a small surface-mount package, making it suitable for compact and densely populated circuit designs.

  10. Where can I find detailed specifications and application notes for SS1H10HE3_B/H?

    • Detailed specifications and application notes for SS1H10HE3_B/H can be found in the product datasheet provided by the manufacturer or distributor.